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专利名称:METHOD OF MANUFACTURING
CAPACITOR, AND CAPACITOR, CIRCUITSUBSTRATE AND SEMICONDUCTORAPPARATUS
发明人:Yoshihiko Imanaka,Hideyuki Amada,Fumiaki
Kumasaka
申请号:US13228091申请日:20110908
公开号:US20120074521A1公开日:20120329
专利附图:
摘要:A method of manufacturing a capacitor includes forming a first ceramic film on afirst base made of a metal, forming a second ceramic film on a second base made of ametal, forming a first copper electrode pattern and a first copper via-plug on a surface ofone of the first and second ceramic films, the electrode pattern and the via-plug beingseparate from each other, bonding the first and second ceramic films together with thefirst electrode pattern and the via-plug therebetween, by applying a pulsed voltagebetween the first base and the second base while the first base and the second base arepressed so that the first ceramic film and the second ceramic film are pressed on eachother, and removing the second base.
申请人:Yoshihiko Imanaka,Hideyuki Amada,Fumiaki Kumasaka
地址:Kawasaki JP,Kawasaki JP,Kawasaki JP
国籍:JP,JP,JP
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