专利内容由知识产权出版社提供
专利名称：METHOD OF FABRICATION OF AI/GE
BONDING IN A WAFER PACKAGINGENVIRONMENT AND A PRODUCTPRODUCED THEREFROM
发明人：Nasiri, Steven,Flannery, Anthony申请号：EP15161041.7申请日：20060309公开号：EP2910522A1公开日：20150826
专利附图：
摘要：A wafer structure comprising a first substrate comprising a cover wafer, the first
substrate including at least one patterned germanium layer; and a second substrate, thesecond substrate including at least one patterned aluminum layer; characterized in thatthe at least one patterned germanium layer is bonded to a first portion of the at leastone patterned aluminum layer to provide a eutectic alloy and create an electrical andmechanical contact; characterized in that a second portion of the at least one patternedaluminum layer is not bonded to the at least one patterned germanium layer and formsan external bond pad; and characterized in that the first substrate and second substrateform a cavity containing a MEMS structure within the bonded at least one germaniumlayer and first portion of the at least one patterned aluminum layer.
申请人：InvenSense, Inc.
地址：3150a Coronado Drive Santa Clara, CA 95054 US
国籍：US
代理机构：Eve, Rosemary Margaret
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