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专利名称：Wafer and method of fabricating the same发明人：Moo Seong Kim申请号：US14354858申请日：20121026公开号：US092811B2公开日：20160308
专利附图：
摘要：Disclosed is a method of manufacturing a thin film, the method including:growing an epitaxial layer on a surface of a wafer at a growth temperature, wherein thegrowing of the epitaxial layer comprises controlling a defect present on a surface of thewafer. Also, disclosed is a wafer including: a substrate; and an epitaxial layer located on
the substrate, wherein a basal dislocation density of the epitaxial layer is equal to or lessthan 1/cm2.
申请人：Moo Seong Kim
地址：Seoul KR
国籍：KR
代理机构：Saliwanchik, Lloyd & Eisenschenk
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