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专利名称：Method of fabrication of AI/GE bonding in a
wafer packaging environment and a productproduced therefrom
发明人：Steven S. Nasiri,Anthony Francis Flannery, Jr.申请号：US12184231申请日：20080731公开号：US08084332B2公开日：20111227
专利附图：
摘要：A method of bonding of germanium to aluminum between two substrates tocreate a robust electrical and mechanical contact is disclosed. An aluminum-germanium
bond has the following unique combination of attributes: (1) it can form a hermetic seal;(2) it can be used to create an electrically conductive path between two substrates; (3) itcan be patterned so that this conduction path is localized; (4) the bond can be made withthe aluminum that is available as standard foundry CMOS process. This has the significantadvantage of allowing for wafer-level bonding or packaging without the addition of anyadditional process layers to the CMOS wafer.
申请人：Steven S. Nasiri,Anthony Francis Flannery, Jr.
地址：Saratoga CA US,Los Gatos CA US
国籍：US,US
代理机构：Sawyer Law Group, P.C.
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