SOT23 PNP SILICON PLANARHIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995PARTMARKING DETAIL 596
7FMMT596CBEABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse CurrentContinuous Collector CurrentBase CurrentPower Dissipation at Tamb=25°COperating and Storage Temperature RangePARAMETERCollector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-Off CurrentEmitter Cut-Off CurrentCollector-Emitter Cut-Off CurrentCollector-Emitter Saturation VoltageSYMBOLVCBOVCEOVEBOICMICIBPtotTj:TstgVALUE-220-200-5-1-0.3-200500-55 to +150MAX.UNITCONDITIONS.VVV-100-100-100-0.2-0.35-1.0-0.9100100853515010nAnAnAVVVVIC=-100µAIC=-10mA*IE=-100µAVCB=-200VVEB=-4VVCES=-200VIC=-100mA,IB=-10mAIC=-250mA,IB=-25mA*IC=-250mA,IB=-25mA*IC=-250mA,VCE=-10V*IC=-1mA, VCE=-10VIC=-100mA,VCE=-10V* IC=-250mA,VCE=-10V*IC=-400mA,VCE=-10V*MHzIC=-50mA, VCE=-10Vf=100MHzpFVCB=-10V, f=1MHzUNITVVVAAmAmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C).SYMBOLMIN.V(BR)CBOV(BR)CEOV(BR)EBOICBOIEBOICESVCE(sat)VBE(sat)Base-Emitter Turn-on VoltageStatic Forward Current Transfer RatioVBE(on)hFE-220-200-5300Transition FrequencyOutput CapacitancefTCobo*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%3 - 143
元器件交易网www.cecb2b.com
FMMT596320240160800
1mA
IC-Collector CurrentVBE(on)v IC
10mA3 - 144
1A
100mA
