SOT23 PNP SILICON PLANARHIGH VOLTAGE TRANSISTOR
ISSUE 3 - OCTOBER 1995COMPLEMENTARY TYPE FMMT497PARTMARKING DETAIL - 597
FMMT597CBEABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse CurrentContinuous Collector CurrentBase CurrentPower Dissipation at Tamb=25°COperating and Storage Temperature RangePARAMETERCollector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-Off CurrentEmitter Cut-Off CurrentCollector-Emitter Cut-Off CurrentEmitter Saturation VoltagesSYMBOLVCBOVCEOVEBOICMICIBPtotTj:TstgVALUE-300-300-5-1-0.2-200500-55 to +150MAX.UNITCONDITIONS.VVV-100-100-100-0.25-0.25-1.0-0.851001001007510300nAnAnAVVVVIC=-100µAIC=-10mA*IE=-100µAVCB=-250VVEB=-4VVCES=-250VIC=-50mA, IB=-5mAIC=-100mA,IB=-20mA*IC=-100mA,IB=-20mA*IC=-100mA,VCE=-10V*IC=-1mA, VCE=-10VIC=-50mA,VCE=-10V*IC=-100mA,VCE=-10V*MHzIC=-50mA, VCE=-10Vf=100MHzpFVCB=-10V, f=1MHzUNITVVVAAmAmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C).SYMBOLMIN.V(BR)CBOV(BR)CEOV(BR)EBOICBOIEBOICESVCE(sat)VBE(sat)Base-Emitter Turn-on VoltageStatic Forward Current Transfer RatioTransition FrequencyOutput CapacitanceVBE(on)hFEfTCobo-300-300-5*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%Spice parameter data is available upon request for this device
3 - 145
元器件交易网www.cecb2b.com
FMMT5970.90.80.60.40.20
1mA10mA100mA1A
IC-Collector Current
hFEV ICIC-Collector CurrentVBE(sat)v IC
10mA100mA1A
3 - 146
