FMMT5179资料

ISSUE 3 - JANUARY 1996FEATURES*High fT=900MHz Min*Max capacitance=1pF*Low noise 4.5dBPARTMARKING DETAIL - 179FMMT5179ECBABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageContinuous Collector CurrentPower DissipationOperating and Storage Temperature RangePARAMETERCollector-Emitter SustainingVoltageCollector-Base BreakdownVoltageEmitter-Base BreakdownVoltageCollector Cut-OffCurrentStatic Forward CurrentTransfer RatioCollector-Emitter SaturationVoltageBase-Emitter Saturation VoltageTransition FrequencyCollector-Base CapacitanceSmall Signal Current GainNoise FigureCommon-Emitter AmplifierPower GainSYMBOLVCEO(SUS)V(BR)CBOV(BR)EBOICBOhFEVCE(sat)VBE(sat)fTCcbhfeNFGpe1525390025MIN.12202.50.021.02500.41.020001300144.5psdBdBVVMHzpFSYMBOLVCBOVCEOVEBOICPtotTj:TstgMAX.VALUE20122.5 50330-55 to +150SOT23UNITVVVmAmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).UNITCONDITIONS.VVVµAµAIC= 3mA, IB=0IC= 1µA, IE=0IE=10µA, IC=0VCB=15V, IE=0VCB=15V, IE=0, Tamb=150°CIC=3mA, VCE=1VIC=10mA, IB=1mAIC=10mA, IB=1mAIC=5mA, VCE=6V, f=100MHzIE=0, VCB=10V, f=1MHzIC=2mA, VCE=6V, f=1KHzIE=2mA, VCB=6V, f=31.9MHzIC=1.5mA, VCE=6VRS=50Ω, f=200MHzIC=5mA, VCE=6Vf=200MHzCollector Base Time Constantrb󰂒CcSpice parameter data is available upon request for this device3 - 169

元器件交易网www.cecb2b.com

FMMT5179TYPICAL CHARACTERISTICS200175°C1500.8100°C25°CVCE=1V1.0VCE=1V-55°C VBE - (Volts) hFE -Gain0.610025°C100°C175°C0.4-55°C 500.200.111010000.1110100IC - (mA) IC - (mA) hFEv IC VBE(on)v IC 1500VCE=6Vf=100MHz1.21.0IE=0f=1MHz fT - (MHz)10000.8 CCB - (pF)0.11101000.60.40.2500000.111030IC - (mA) VCB - (Volts) fTv IC CCBv VCB 3 - 170