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SuperSOT
SOT23 NPN SILICON POWER(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995FEATURES
FMMT617FMMT618FMMT619FMMT624FMMT625*
*****
625mW POWER DISSIPATION
IC CONT 3A
12A Peak Pulse Current
Excellent HFE Characteristics Up To 12A (pulsed)Extremely Low Saturation Voltage E.g. 8mV Typ.Extremely Low Equivalent On Resistance; RCE(sat)
CBEDEVICE TYPEFMMT617FMMT618FMMT619FMMT624FMMT625COMPLEMENTFMMT717FMMT718FMMT720FMMT723PARTMARKING617618619624625RCE(sat)50mΩ at 3A50mΩ at 2A75mΩ at 2A--ABSOLUTE MAXIMUM RATINGS.PARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse Current**Continuous Collector CurrentBase CurrentPower Dissipation at Tamb =25°C*SYMBOLVCBOVCEOVEBOICMICIBPtotFMMTFMMTFMMTFMMTFMMT617618619624625151551232020562.55050562500625-55 to +150125125531150150531UNITVVVAAmAmW°COperating and Storage TemperatureTj:TstgRange*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%Spice parameter data is available upon request for these devices
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FMMT624FMMT625ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERCollector-BaseBreakdown VoltageCollector-EmitterBreakdown VoltageEmitter-BaseBreakdown VoltageCollector Cut-OffCurrentEmitter Cut-OffCurrentCollector EmitterCut-Off CurrentCollector-EmitterSaturation VoltageSYMBOLV(BR)CBOV(BR)CEOV(BR)EBOICBOIEBOICESVCE(SAT)2670160165VBE(SAT)VBE(ON)hFE2003001001000.850.740045014018155FMMT624MIN.125125TYP.2501601501505100100100501502202501.01.02003003010015FMMT625TYP.3001758.3MAX.MAX.MIN.UNITCONDITIONS.VVVnAnAnAnAnAmVmVmVmVmVVVIC=100µAIC=10mA*IE=100µAVCB=100VVCB=130VVEB=4VVCES=100VVCES=130VIC=0.1A, IB=10mA*IC=0.1A, IB=1mA*IC=0.5A, IB=50mA*IC=0.5A, IB=10mA*IC=1A, IB=50mA*IC=1A, IB=50mA*IC=1A, VCE=10V*IC=10mA, VCE=10V*IC=0.2A, VCE=10V*IC=1A, VCE=10V*IC=3A, VCE=10V*MHzIC=50mA, VCE=10Vf=100MHzVCB=10V, f=1MHzVCC=50V, IC=0.5AIB1=-IB2=50mA58.3100100100261101800.850.7440045045151356160150010502003001.01.0Base-Emitter Saturation VoltageBase-EmitterTurn-On VoltageStatic ForwardCurrent Transfer RatioTransition FrequencyOutput CapacitanceTurn-On TimeTurn-Off TimefTCOBOt(ON)t(OFF)7601300pFnsns*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%3 - 155
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FMMT624TYPICAL CHARACTERISTICS
25°C
I+/I*=20
0.50.40.30.20.10.01mA
10mA
100mA
1A
10A
I+/I*=50I+/I*=20I+/I*=10
0.50.40.30.20.10.0
1mA
10mA
100mA
1A
10A
100°C25°C-55°C
Collector Current Collector Current
VCE(SAT)vs IC
1.0
450
0.80.6
225
0.40.20.0
VCE(SAT)vs IC
1.21.00.80.60.40.20.0
V+-=10V
100°CI+/I*=20
-55°C25°C25°C
100°C-55°C
1mA10mA100mA1A10A1mA10mA100mA1A10A
Collector Current Collector Current
hFEvs IC
1.21.00.80.60.40.20.01mA
10mA
100mA
1A
10A
0.01
1.0
-55°C25°C100°CVBE(SAT)vs IC
10SINGLE PULSE TEST Tamb= 25 deg CV+-=10V
1.0
0.1D.C.1s100ms
10ms1ms100µs
10 100 1000 Collector Current VCE(VOLTS)
VBE(ON)vs IC
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Safe Operating Area
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FMMT617 FMMT624FMMT618 FMMT625FMMT619 SuperSOT Series
FMMT717FMMT722FMMT718FMMT723FMMT720THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
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