SuperSOT
SOT23 PNP SILICON POWER(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996FEATURESFMMT717FMMT718FMMT720FMMT722FMMT723******625mW POWER DISSIPATIONCBEIC CONT 2.5AIC Up To 10A Peak Pulse CurrentExcellent hfe Characteristics Up To 10A (pulsed)Extremely Low Saturation Voltage E.g. 10mV Typ.Exhibits extremely low equivalent on-resistance; RCE(sat) DEVICE TYPEFMMT717FMMT718FMMT720FMMT722FMMT723COMPLEMENTFMMT617FMMT618FMMT619FMMT624PARTMARKING717718720722723RCE(sat)72mΩ at 2.5A97mΩ at 1.5A163mΩ at 1.5A--ABSOLUTE MAXIMUM RATINGSPARAMETERCollector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltagePeak Pulse Current**Continuous Collector CurrentBase CurrentPower Dissipation at Tamb =25°C*Operating and StorageTemperature RangeSYMBOLVCBOVCEOVEBOICMICIBPtotTj:TstgFMMT717-12-12-5-10-2.5FMMT718-20-20-5-6-1.5FMMT720-40-40-5-4-1.5-500625-55 to +150FMMT722-70-70-5-3-1.5FMMT723-100-100-5-2.5-1UNITVVVAAmAmW°C*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%Spice parameter data is available upon request for these devices
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FMMT722FMMT723ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERSYMBOLFMMT722MIN.-70-70TYP.-150-125-100-100-5-100-100-100-35-135-140-175-50-200-220-260-1.05-1.0300300250FMMT723TYP.-200-160-8.8MAX.MAX.MIN.UNITCONDITIONS.VVVnAnAnAnAnAmVmVmVmVmVmVVVIC=-100µAIC=-10mA*IE=-100µAVCB=-60VVCB=-80VVEB=-4VVCES=-60VVCES=-80VIC=-0.1A, IB=-10mA*IC=-0.5A, IB=-20mA*IC=-0.5A, IB=-50mA*IC=-1A, IB=-100mA*IC=-1A, IB=-150mA*IC=-1.5A, IB=-200mA*IC=-1A, IB=-150mA*IC=-1.5A, IB=-200mA*IC=-1A, VCE=-10V*IC=-1.5A, VCE=-5V*IC=-10mA, VCE=-5V*IC=-10mA, VCE=-10V*IC=-0.1A, VCE=-5V*IC=-0.1A, VCE=-10V*IC=-0.5A, VCE=-10V*IC=-1A, VCE=-5V*IC=-1A, VCE=-10V*IC=-1.5A, VCE=-5V*IC=-1.5A, VCE=-10V*IC=-3A, VCE=-5V*MHzIC=-50mA, VCE=-10Vf=100MHzVCB=-10V, f=1MHzVCC=-50V, IC=-0.5AIB1=IB2=-50mACollector-BaseV(BR)CBOBreakdown VoltageCollector-EmitterV(BR)CEOBreakdown VoltageEmitter-BaseV(BR)EBOBreakdown VoltageCollector Cut-OffCurrentEmitter Cut-OffCurrentCollector EmitterCut-Off CurrentCollector-EmitterSaturation VoltageICBOIEBOICESVCE(sat)-5-8.8-100-100-100-50-125-210-0.-0.71-80-200-330-1.0-1.0Base-Emitter Saturation VoltageBase-EmitterTurn-On VoltageStatic ForwardCurrent Transfer RatioVBE(sat)VBE(on)hFE30030017540-0.94-0.78470450275601047545037525030Transition FrequencyfT15020015020200135076020Output CapacitanceCoboTurn-On TimeTurn-Off Timet(on)t(off)1440700pFnsns*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%3 - 165
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FMMT7220.6
0.60.50.4
I+/I*=50I+/I*=20I+/I*=10I+/I*=5
25°C
0.30.20.1
10mA100mA1A 10A10mA100mA1A 10A
Collector Current Collector Current
VBE(SAT)vs IC
1.61.41.21.00.80.60.40.20.0
10mA
100mA
1A
10A225450
1.21.00.80.60.40.20.0
VCE(SAT)vs IC
V+-=5V
I+/I*=5
10mA100mA1A
Collector Current
Collector Current
hFEvs IC
VBE(SAT)vs IC
10SINGLE PULSE TEST Tamb= 25 deg C
1.00.80.60.40.20.0
V+-=5V
1.0
0.1
100µs
10mA100mA1A10A
0.01
110100
Collector Current
VBE(ON)vs IC
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元器件交易网www.cecb2b.com
FMMT617 FMMT624FMMT618 FMMT625FMMT619 SuperSOT Series
FMMT717FMMT722FMMT718FMMT723FMMT720THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
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