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SS9018SS9018
AM/FM Amplifier, Local Oscillator of FM/VHF Tuner
•High Current Gain Bandwidth Product fT=1.1 GHz (Typ)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
SymbolVCBOVCEOVEBOICPCTJTSTG
Collector-Base VoltageCollector-Emitter VoltageEmitter-Base VoltageCollector Current
Collector Power DissipationJunction TemperatureStorage Temperature
Parameter
Ratings3015550400150-55 ~ 150
UnitsVVVmAmW°C°C
Electrical Characteristics Ta=25°C unless otherwise noted
SymbolBVCBOBVCEOBVEBOICBOhFEVCE (sat)CobfT
Parameter
Collector-Base Breakdown VoltageCollector-Emitter Breakdown VoltageEmitter-Base Breakdown VoltageCollector Cut-off CurrentEmitter Cut-off Current
Collector-Emitter Saturation VoltageOutput Capacitance
Current Gain Bandwidth Product
Test ConditionIC =100µA, IE =0IC =1.0mA, IB =0IE =100µA, IC =0VCB =12V, IE =0VCE =5V, IC =1.0mAIC =10mA, IB =1mAVCB =10V, IE =0f=1MHz
VCE =5V, IC =5mA
700
1.31100
28
100
Min.30155
501980.51.7
VpFMHz
Typ.
Max.
UnitsVVVnA
hFE Classification
Classification
hFE
D28 ~ 45
E39 ~ 60
F54 ~ 80
G72 ~ 108
H97 ~ 146
I132 ~ 198
©2002 Fairchild Semiconductor CorporationRev. A4, November 2002
SS9018Typical Characteristics 1091000 VCE = 5VIB = 90µAIC[mA], COLLECTOR CURRENT876543210012345678IB = 70µAIB = 60µAIB = 50µAIB = 40µAIB = 30µAIB = 20µAIB = 10µA hFE, DC CURRENT GAINIB = 80µA10010910110VCE[V], COLLECTOR-EMITTER VOLTAGEIC[mA], COLLECTOR CURRENTFigure 1. Static CharacteristicFigure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1010IC = 10 IBf = 1MHzIE = 01VBE(sat)Cob[pF], CAPACITANCE 0.1VCE(sat)0.010.11100.1110100IC[mA], COLLECTOR CURRENTVCB[V], COLLECTOR-BASE VOLTAGEFigure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation VoltageFigure 4. Output CapacitancefT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT VCE = 5V10001000.1110IC[mA], COLLECTOR CURRENTFigure 5. Current Gain Bandwidth Product©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
1 SS9018Package DimensionsTO-924.58–0.15+0.250.46 ±0.1014.47 ±0.404.58 ±0.201.27TYP[1.27 ±0.20]3.60 ±0.201.27TYP[1.27 ±0.20]0.38–0.05+0.103.86MAX1.02 ±0.100.38–0.05+0.10(R2.29)(0.25)Dimensions in Millimeters©2002 Fairchild Semiconductor Corporation
Rev. A4, November 2002
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PRODUCT STATUS DEFINITIONSDefinition of Terms
Datasheet IdentificationAdvance Information
Product StatusFormative or In DesignFirst Production
Definition
This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.
This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
Preliminary
No Identification NeededFull Production
ObsoleteNot In Production
©2002 Fairchild Semiconductor CorporationRev. I1