专利内容由知识产权出版社提供
专利名称：Method of manufacturing single crystalline
gallium nitride thick film
发明人：Shin, Hyun Min Samsung Corning Co.,Lee,
Chang Ho Samsung Corning Co.
申请号：EP06124395.2申请日：20061120公开号：EP1788126A1公开日：20070523
专利附图：
摘要：A method of manufacturing a single crystalline gallium nitride (GaN) thick filmgrown by loading a base substrate in a hydride vapor phase epitaxy (HVPE) reactor, the
method including: growing a first GaN film at a first temperature, in the surface kinetics-controlled regime, where a growth rate is determined by the reaction rate on a filmsurface; and growing a second GaN film on the first GaN film at a second temperature, inthe mass transport-controlled regime, where the growth rate is determined by amaterial transport in the vapor phase, wherein a growth temperature of the second GaNfilm is higher than that of the first GaN film. According to the present invention, defects,bending, and cracks may be reduced and the crystalline GaN thick film of excellentcrystal quality may be manufactured.
申请人：Samsung Corning Co., Ltd.
地址：472, Sin-dong Yeongtong-gu Suwon-si Kyungki-do 443-732 KR
国籍：KR
代理机构：Rupprecht, Kay
更多信息请下载全文后查看
