专利内容由知识产权出版社提供
专利名称：Method of fabricating a metal contact
structure
发明人：Sang Jun Han,Won Taik Kwon,Jeong Hoe Kim申请号：US08/842038申请日：19970423公开号：US05851914A公开日：19981222
摘要：A method for fabricating a metal contact structure of semiconductor devicescomprising forming a first conducting layer; a first insulating layer disposed on said firstconducting layer; a first contact hole to said first conducting layer; wherein said firstcontact hole is formed in said first insulating layer; dummy conducting patterns formed insaid first contact hole, wherein said conducting dummy patterns are contacted with saidfirst conducting layer through said first contact hole, and said dummy film is partlyoverlapped on the said first insulating layer; a second insulating layer disposed on saidfirst insulating layer; a second contact hole, wherein said second contact hole is formed insaid second insulating layer, and wherein said first contact hole and said second contacthole substantially form a through- hole; and a second conducting layer disposed on saidsecond insulating layer which is contacted to said dummy conducting patterns throughsaid second contact hole.
申请人：HYUNDAI ELECTRONICS INDUSTRIES CO., LTD.
代理机构：Blakely Sokoloff Taylor & Zafman
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