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专利名称：Charge-coupled device having high charge-transfer efficiency over a broad temperaturerange
发明人：Banghart, Edmund Kenneth,Nelson, Edward
Tichenor,Des Jardin, William Frederick,Lavine,James Philip,Burkey, Bruce Curtiss
申请号：EP93119809.7申请日：19931208公开号：EP0601568A1公开日：19940615
专利附图：
摘要：A charge-coupled device having a high charge-transfer efficiency over a broadtemperature range. The device comprises a substrate of semiconductor material of oneconductivity type; a first buried channel formed in the substrate and of a conductivitytype opposite to that of the substrate; a second buried channel of a conductivity typeopposite to that of the substrate formed in the same region of the substrate as the firstburied channel and having a greater depth of penetration into the substrate than thefirst buried channel; compensated regions formed at intervals in the buried channelsproviding a means for containing individual packets of charge and shaped for inducing anarrow channel effect and for producing a fringing electric field in a direction of chargetransfer in uncompensated buried channel regions; electrode gates associated with eachpair of adjoining compensated and uncompensated regions in the device; and means forclocking the electrodes for causing a string of charge packets to be transferred throughthe device.
申请人：EASTMAN KODAK COMPANY
地址：343 State Street Rochester, New York 14650-2201 US
国籍：US
代理机构：Wagner, Karl H., Dipl.-Ing.
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