APM3023NV资料

APM3023NV

N-Channel Enhancement Mode MOSFETFeatures

• 30V/7A,

RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V

Pin Description

• Super High Dense Cell Design• Reliable and Rugged

• Lead Free Available (RoHS Compliant)

G

D

S

Top View of SOT-223

(2)DApplications

• Switching Regulators• Switching Converters

(1)G

S(3)

N-Channel MOSFET

Ordering and Marking Information

APM3023N

Lead Free CodeHandling CodeTemp. RangePackage Code

Package Code V : SOT-223

Operating Junction Temp. Range C : -55 to 150°CHandling Code

TU : Tube TR : Tape & ReelLead Free Code

L : Lead Free Device Blank : Original DeviceXXXXX - Date Code

APM3023N V:

APM3023NXXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-tion at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advisecustomers to obtain the latest version of relevant information to verify before placing orders.Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Note: Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient 2

30 ±20 VGS=10V 7 28 1.5 150 -55 to 150 V A A °C TA=25°C 1.47 W TA=100°C 0.58 85 °C/W *Surface Mounted on 1inpad area, t ≤ 10sec.

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current APM3023NV Test Condition Unit Min. Typ. Max. 30 V VGS=0V, IDS=250µA VDS=24V, VGS=0V 1 µA TJ=85°C 30 VDS=VGS, IDS=250µA 1 1.5 2 V VGS=±20V, VDS=0V ±100 nA VGS=10V, IDS=7A 15 20 mΩ 22 28 VGS=5V, IDS=5A ISD=1.5A, VGS=0V 0.8 1.3 V VDS=15V, VGS=10V, IDS=7A 30 5.8 39 nC VGS(th) Gate Threshold Voltage IGSS aGate Leakage Current RDS(ON) Drain-Source On-state Resistance VSD aDiode Forward Voltage bGate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 3.8 Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol Parameter Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss td(ON) Tr td(OFF) Tf Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%.

b : Guaranteed by design, not subject to production testing.

bAPM3023NV Test Condition Unit Min. Typ. Max. VGS=0V,VDS=0V,F=1MHz 2.5 Ω VGS=0V, VDS=25V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω 830 145 15 11 17 37 18 26 54 ns pF Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time 20 30 Copyright  ANPEC Electronics Corp.

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APM3023NV

Typical Characteristics

Power Dissipation

Drain Current

876

1.61.41.2

Ptot - Power (W)ID - Drain Current (A)1.00.8

54321

0.60.40.20.0

TA=25C0

20

40

60

80100120140160

o 0

TA=25C,VG=10V0

20

40

60

80

100120140160

oTj - Junction Temperature (°C)

Tj - Junction Temperature

Safe Operation Area

Thermal Transient Impedance

nt Thermal ResistanceNormalized Transie50

imit21

Duty = 0.50.20.110

ID - Dra in Current (A)Rds(on) L300us1

1ms10ms100ms1sDC 0.1

0.020.010.050.1

0.01

Single Pulse0.010.01

TA=25C0.1

1

o10100

1E-3

1E-41E-30.01

Mounted on 1in padoRθJA :85C/W20.1110100

VDS - Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

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APM3023NV

Typical Characteristics (Cont.)

Output Characteristics

2824

VGS=5, 6, 7, 8, 9, 10V4035Drain-Source On Resistance RDS(ON) - On - Resistance (mΩ)ID - Drain Current (A)20161284

3V00246810302520151050VGS=10V 0481216202428VGS=5V4V VDS - Drain - Source Voltage (V) ID - Drain Current (A)Transfer Characteristics 2824

Gate Threshold Voltage 1.6IDS =250µA1.4Normalized Th reshold VoltageID - Drain Current (A)2016

1.21.00.80.60.40.20.0-50-25

12840

Tj=125CTj=25CooTj=-55Co0123450255075100125150

VGS - Gate - Source Voltage (V)

Tj - Junction Temperature (°C)

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APM3023NV

Typical Characteristics (Cont.)

Drain-Source On Resistance

Source-Drain Diode Forward

2.0

1.8 I = 7ADSVGS = 10V 30

Normalized On Resistance1.6

10

1.21.0

IS - Source Current (A)1.4

Tj=150Co0.80.60.40.20.0

-50-25

RON@Tj=25C: 15mΩ0

25

50

75

100125150

oTj=25C 1

0.30.00.40.81.21.62.0

Tj - Junction Temperature (°C)

VSD - Source - Drain Voltage (V)Capacitance

Gate Charge

10

Frequency=1MHz140012001000

Ciss800600400200

Crss00

5

10

15

20

25

30

Coss9I = 7ADVDS=15VVGS - Gate-source Voltage (V)8765432100

5

10

15

20

25

30

C - Capacitance (pF) VDS - Drain-Source Voltage (V)

QG - Gate Charge (nC)

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APM3023NV

Package Information

SOT- (Reference EIAJ ED-7500A Reg stration SC-62)

DD1aHE123LB1ee1CBAaDimABB1CDD1ee1EHLαMillimetersMin.1.400.400.350.354.401.351.50 BSC3.00 BSC2.293.750.802.604.251.2010°0.0900.1480.031Max.1.600.560.480.444.601.83Min.0.0550.0160.0140.0140.1730.053InchesMax.0.0630.0220.0190.0170.1810.0720.059 BSC0.118 BSC0.1020.1670.04710°Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Package Information

SOT-223( Reference JEDEC Registration SOT-223)

DB1AcaHELKee1bA1BDimAA1BB1cDEee1HLKαβMin.1.500.020.602.900.286.303.30MillimetersMax.1.800.080.803.100.326.703.702.3 BSC4.6 BSC6.700.911.500°13°8

InchesMin.0.060.020.110.010.250.130.09 BSC0.18 BSC7.301.102.0010°0.260.040.060°13°www.anpec.com.tw

Max.0.070.030.120.010.260.150.290.040.0810°Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Physical Specifications

Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow)

TP

Ramp-uptpCritical ZoneTL to TP TemperatureTL

TsmaxtLTsminRamp-downtsPreheat25

° t 25 C to PeakTime

Classification Reflow Profiles

Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3°C/second max. 100°C 150°C 60-120 seconds 183°C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds See table 2 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Classification Reflow Profiles(Cont.)

Table 1. SnPb Entectic Process – Package Peak Reflow Temperatures 3 3 Package Thickness Volume mmVolume mm<350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 333Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program

Test itemSOLDERABILITYHOLTPCTTSTMethodMIL-STD-883D-2003MIL-STD 883D-1005.7JESD-22-B, A102MIL-STD 883D-1011.9Description245°C,5 SEC1000 Hrs Bias @ 125°C168 Hrs, 100% RH, 121°C-65°C ~ 150°C, 200 CyclesCarrier Tape & Reel Dimensions

tEPoPP1DWFBoAoD1KoCopyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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APM3023NV

Carrier Tape & Reel Dimensions(Cont.)

T2JCABT1Application A B 330±1 62±1.5 SOT-223 F D C 12.75± 0.15 D1 1.5+ 0.1 J 2 ± 0.6 Po T1 12.4 +0.2 P1 T2 2± 0.2 Ao W 12 ± 0.3 Bo 7.5± 0.1 P 8 ± 0.1 Ko E 1.75± 0.1 t 5.5 ± 0.05 1.5+ 0.1 4.0 ± 0.1 2.0 ± 0.05 6.9 ± 0.1 2.1± 0.1 0.3±0.05 (mm)Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel SOT-223 12 9.3 2500 Customer Service

Anpec Electronics Corp.

Head Office :

5F, No. 2 Li-Hsin Road, SBIP,Hsin-Chu, Taiwan, R.O.C.Tel : 886-3-52000Fax : 886-3-52050Taipei Branch :

7F, No. 137, Lane 235, Pac Chiao Rd.,

Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.Tel : 886-2-191368Fax : 886-2-191369

Copyright  ANPEC Electronics Corp.Rev. B.1 - Mar., 2005

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