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专利名称：Boron-containing dopant compositions,
systems and methods of use thereof forimproving ion beam current and
performance during boron ion implantation
发明人：Ashwini K. Sinha,Stanley M. Smith,Douglas C.
Heiderman,Serge M. Campeau
申请号：US14635413申请日：20150302公开号：US09570271B2公开日：20170214
专利附图：
摘要：A novel composition, system and method thereof for improving beam currentduring boron ion implantation are provided. The boron ion implant process involvesutilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected tohave an ionization cross-section higher than that of the BF3 at an operating arc voltage ofan ion source utilized during generation and implantation of active hydrogen ions species.The hydrogen allows higher levels of B2H6 to be introduced into the BF3 withoutreduction in F ion scavenging. The active boron ions produce an improved beam currentcharacterized by maintaining or increasing the beam current level without incurringdegradation of the ion source when compared to a beam current generated fromconventional boron precursor materials.
申请人：Ashwini K. Sinha,Stanley M. Smith,Douglas C. Heiderman,Serge M. Campeau
地址：East Amherst NY US,Clarence Center NY US,Akron NY US,Lancaster NY US
国籍：US,US,US,US
代理人：Nilay S. Dalal
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