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专利名称：Wafer-level transfer of membranes with
gas-phase etching and wet etching methods
发明人：Eui-Hyeok Yang申请号：US10678359申请日：20031002公开号：US07268081B2公开日：20070911
专利附图：
摘要：Techniques for transferring a membrane from one wafer to another wafer toform integrated semiconductor devices. In one implementation, a carrier wafer is
fabricated to include a membrane on one side of the carrier wafer. The membrane on the
carrier wafer is then bond to a surface of a different, device wafer by a plurality of joints.Next, the carrier wafer is etched away by a dry etching chemical to expose the membraneand to leave said membrane on the device wafer. Transfer of membranes with a wetetching process is also described.
申请人：Eui-Hyeok Yang
地址：Stevenson Ranch CA US
国籍：US
代理机构：Fish & Richardson P.C.
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