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专利名称：Memory device with improved refresh
scheme for redundancy word line
发明人：Sang-Hee Kim申请号：US14569311申请日：20141212公开号：US09514850B2公开日：20161206
专利附图：
摘要：A memory device includes a plurality of redundancy word lines each of which iscoupled with a plurality of redundancy memory cells, and a redundancy refresh circuitsuitable for sequentially refreshing first redundancy word lines that are selected as
target word lines for an additional refresh operation among the plurality of theredundancy word lines.
申请人：SK hynix Inc.
地址：Gyeonggi-do KR
国籍：KR
代理机构：IP & T Group LLP
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