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专利名称：Strained silicon layer semiconductor product
employing strained insulator layer
发明人：Chien-Chao Huang,Chao-Hsiung
Wang,Chung-Hu Ge,Wen-Chin Lee,Chen MingHu
申请号：US10366220申请日：20030213公开号：US06924181B2公开日：20050802
专利附图：
摘要：A strained silicon layer fabrication and a method for fabrication thereof employ
a strained insulator material layer formed over a strained silicon layer in turn formedupon a strained silicon-germanium alloy material layer which is formed upon a relaxedmaterial substrate. The strained insulator material layer provides increased fabricationoptions which provide for enhanced fabrication efficiency when fabricating the strainedsilicon layer fabrication.
申请人：Chien-Chao Huang,Chao-Hsiung Wang,Chung-Hu Ge,Wen-Chin Lee,Chen MingHu
地址：Hsin-chu TW,Hsinchu TW,Hsin-Chu TW,Hsin-Chu TW,Hsinchu TW
国籍：TW,TW,TW,TW,TW
代理机构：Tung & Associates
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