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专利名称：Layered Semiconductor Scintillator发明人：Serge Luryi,Arsen Subashiev申请号：US13316706申请日：20111212
公开号：US20120161015A1公开日：20120628
专利附图：
摘要：A scintillator detector of high-energy radiation comprising a semiconductor slabthat is composed of alternating layers of barrier and well material. The barrier and wellmaterial layers are direct bandgap semiconductors. Bandgap of the well material issmaller than the bandgap of the barrier material. The combined thickness of the well
layers is substantially less than the total thickness of said slab. The thickness of thebarrier layers is substantially larger than the diffusion length of minority carriers. Thethickness of the well layers is sufficiently large to absorb most of the incident scintillatingradiation generated in the barrier layers in response to an ionization event frominteraction with an incident high-energy particle.
申请人：Serge Luryi,Arsen Subashiev
地址：Old Field NY US,Centereach NY US
国籍：US,US
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