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专利名称：Cointegration of optical waveguides,
microfluidics, and electronics on sapphiresubstrates
发明人：Yann A. N. Astier,Ning Li,Devendra K.
Sadana,Joshua T. Smith,William T. Spratt
申请号：US15432732申请日：20170214公开号：US09983133B2公开日：20180529
专利附图：
摘要：A method of forming a semiconductor structure includes forming a first optical
waveguide and a second optical waveguide on a sapphire substrate. The first opticalwaveguide and the second optical waveguide each include a core portion of galliumnitride (GaN), and a cladding layer laterally surrounding the core portion. The claddinglayer includes a material having a refractive index less than a refractive index of thesapphire substrate. The method further includes etching a portion of the cladding layerto form a microfluidic channel therein and forming a capping layer on a top surface of thefirst optical waveguide, the second optical waveguide and the microfluidic channel.
申请人：International Business Machines Corporation
地址：Armonk NY US
国籍：US
代理机构：Scully, Scott, Murphy & Presser, P.C.
代理人：Louis J. Percello, Esq.
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