LV2205资料

MMBV2101LT1 Series,

MV2105, MV2101, MV2109,LV2205, LV2209Silicon Tuning Diodes

6.8–100 pF, 30 Volts

Voltage Variable Capacitance Diodes

These devices are designed in popular plastic packages for the highvolume requirements of FM Radio and TV tuning and AFC, generalfrequency control and tuning applications. They provide solid–statereliability in replacement of mechanical tuning methods. Alsoavailable in a Surface Mount Package up to 33 pF.

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3CathodeSOT–231Anode••••

High Q

Controlled and Uniform Tuning RatioStandard Capacitance Tolerance – 10%Complete Typical Design Curves

2Cathode

TO–92

1Anode

MARKINGDIAGRAM

3MAXIMUM RATINGS

RatingReverse VoltageForward CurrentForward Power Dissipation@ TA = 25°CMMBV21xxDerate above 25°C@ TA = 25°CDerate above 25°CJunction TemperatureStorage Temperature RangeMV21xxLV22xxTJTstgSymbolVRIFPDValue302002251.82802.8+150–55 to +150°C°C1UnitVdcmAdcmWmW/°C12XXX M

TO–236AB, SOT–23CASE 318–08STYLE 8

XXX= Device Code*M= Date Code* See Table

XXXXXXYWW

2DEVICE MARKING

MMBV2101LT1 = M4GMMBV2103LT1 = 4HMMBV2105LT1 = 4UMMBV2107LT1 = 4WMMBV2108LT1 = 4XMMBV2109LT1 = 4JMV2101 = MV2101MV2105 = MV2105MV2109 = MV2109LV2205 = LV2205LV2209 = LV2209TO–226AC, TO–92

CASE 182STYLE 1

XX= Device Code Line 1*XXXX= Device Code Line 2*M= Date Code* See Table

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

CharacteristicReverse Breakdown Voltage(IR = 10 µAdc)MMBV21xx, MV21xxLV22xxReverse Voltage LeakageCurrent(VR = 25 Vdc, TA = 25°C)Diode CapacitanceTemperature Coefficient(VR = 4.0 Vdc, f = 1.0 MHz)SymbolV(BR)R3025IR––––––0.1µAdcMinTypMaxUnitVdcPreferred devices are recommended choices for future useand best overall value.

TCC–280–ppm/°C© Semiconductor Components Industries, LLC, 20011

October, 2001 – Rev. 3

Publication Order Number:

MMBV2101LT1/D

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

CT, Diode CapacitanceVR = 4.0 Vdc, f = 1.0 MHzpFDeviceMMBV2101LT1/MV2101MMBV2103LT1LV2205/MMBV2105LT1/MV2105MMBV2107LT1MMBV2108LT1LV2209MMBV2109LT1/MV2109Min6.19.013.519.824.329.7Nom6.81015222733Max7.51116.524.229.736.3Q, Figure of MeritVR = 4.0 Vdc,f = 50 MHzTyp450400400350300200Min2.52.52.52.52.52.5TR, Tuning RatioC2/C30f = 1.0 MHzTyp2.72.92.92.93.03.0Max3.23.23.23.23.23.2MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title anddrop the ”T1” suffix when ordering any of these devices in bulk.

PARAMETER TEST METHODS

1.CT, DIODE CAPACITANCE

(CT = CC + CJ). CT is measured at 1.0 MHz using acapacitance bridge (Boonton Electronics Model 75A orequivalent).

2.TR, TUNING RATIO

4.TCC, DIODE CAPACITANCE TEMPERATURECOEFFICIENT

TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0MHz, TA = –65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA= +85°C in the following equation, which defines TCC:

TCC+

°C)–CT(–65°C)106ŤCT()8585Ť·)65C(25°C)

T

TR is the ratio of CT measured at 2.0 Vdc divided by CT

measured at 30 Vdc.

3.Q, FIGURE OF MERIT

Q is calculated by taking the G and C readings of anadmittance bridge at the specified frequency andsubstituting in the following equations:

Q+2pfC

G

Accuracy limited by measurement of CT to ±0.1 pF.

(Boonton Electronics Model 33AS8 or equivalent). UseLead Length [ 1/16”.

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

TYPICAL DEVICE CHARACTERISTICS

1000500CT, DIODE CAPACITANCE (pF)2001005020105.02.01.00.10.20.30.51.02.03.05.0102030MMBV2109LT1/MV2109MMBV2105LT1/MV2105MMBV2101LT1/MV2101TA = 25°Cf = 1.0 MHzVR, REVERSE VOLTAGE (VOLTS)

Figure 1. Diode Capacitance versus Reverse Voltage

1.040NORMALIZED DIODE CAPACITANCEIR, REVERSE CURRENT (nA)1.0301.0201.0101.0000.9900.9800.9700.960-75-50NORMALIZED TO CTat TA = 25°CVR = (CURVE)-250+25+50+75TJ, JUNCTION TEMPERATURE (°C)+100+125VR = 4.0 VdcVR = 30 VdcVR = 2.0 Vdc1005020105.02.01.00.500.200.100.050.020.0105.01015202530TA = 125°CTA = 75°CTA = 25°CVR, REVERSE VOLTAGE (VOLTS)Figure 2. Normalized Diode Capacitance versusJunction Temperature500030002000Q, FIGURE OF MERIT1000500300200100503020101.02.0103.05.07.0VR, REVERSE VOLTAGE (VOLTS)

TA = 25°Cf = 50 MHz2030MMBV2101LT1/MV2101MMBV2109LT1Q, FIGURE OF MERIT50003000200010005003002001005030201010Figure 3. Reverse Current versus Reverse BiasVoltageMMBV2101LT1/MV2101TA = 25°CVR = 4.0 Vdc20MMBV2109LT1/MV2109100305070f, FREQUENCY (MHz)

200250Figure 4. Figure of Merit versus Reverse VoltageFigure 5. Figure of Merit versus Frequency

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of thetotal design. The footprint for the semiconductor packagesmust be the correct size to insure proper solder connection

0.0370.95interface between the board and the package. With thecorrect pad geometry, the packages will self align whensubjected to a solder reflow process.

0.0370.950.0792.00.0350.90.0310.8inchesmmSOT–23

SOT–23 POWER DISSIPATION

The power dissipation of the SOT–23 is a function of thepad size. This can vary from the minimum pad size forsoldering to a pad size given for maximum power dissipa-tion. Power dissipation for a surface mount device is deter-mined by TJ(max), the maximum rated junction temperatureof the die, RθJA, the thermal resistance from the devicejunction to ambient, and the operating temperature, TA.Using the values provided on the data sheet for the SOT–23package, PD can be calculated as follows:

PD =

TJ(max) – TARθJA

SOLDERING PRECAUTIONS

The values for the equation are found in the maximumratings table on the data sheet. Substituting these valuesinto the equation for an ambient temperature TA of 25°C,one can calculate the power dissipation of the device whichin this case is 225 milliwatts.

PD =

150°C – 25°C556°C/W

= 225 milliwatts

The 556°C/W for the SOT–23 package assumes the useof the recommended footprint on a glass epoxy printedcircuit board to achieve a power dissipation of 225 milli-watts. There are other alternatives to achieving higherpower dissipation from the SOT–23 package. Anotheralternative would be to use a ceramic substrate or analuminum core board such as Thermal Clad™. Using aboard material such as Thermal Clad, an aluminum coreboard, the power dissipation can be doubled using the samefootprint.

The melting temperature of solder is higher than therated temperature of the device. When the entire device isheated to a high temperature, failure to complete solderingwithin a short time could result in device failure. There-fore, the following items should always be observed inorder to minimize the thermal stress to which the devicesare subjected.

•Always preheat the device.

•The delta temperature between the preheat andsoldering should be 100°C or less.*

•When preheating and soldering, the temperature of theleads and the case must not exceed the maximumtemperature ratings as shown on the data sheet. Whenusing infrared heating with the reflow solderingmethod, the difference shall be a maximum of 10°C.•The soldering temperature and time shall not exceed260°C for more than 10 seconds.

•When shifting from preheating to soldering, themaximum temperature gradient shall be 5°C or less.•After soldering has been completed, the device shouldbe allowed to cool naturally for at least three minutes.Gradual cooling should be used as the use of forcedcooling will increase the temperature gradient andresult in latent failure due to mechanical stress.•Mechanical stress or shock should not be appliedduring cooling.

*Soldering a device without preheating can cause exces-sive thermal shock and stress which can result in damageto the device.

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

SOLDER STENCIL GUIDELINES

Prior to placing surface mount components onto a printedcircuit board, solder paste must be applied to the pads. Asolder stencil is required to screen the optimum amount ofsolder paste onto the footprint. The stencil is made of brassor stainless steel with a typical thickness of 0.008 inches.

The stencil opening size for the surface mounted packageshould be the same as the pad size on the printed circuitboard, i.e., a 1:1 registration.

TYPICAL SOLDER HEATING PROFILE

For any given circuit board, there will be a group ofcontrol settings that will give the desired heat pattern. Theoperator must set temperatures for several heating zones,and a figure for belt speed. Taken together, these controlsettings make up a heating “profile” for that particularcircuit board. On machines controlled by a computer, thecomputer remembers these profiles from one operatingsession to the next. Figure 7 shows a typical heating profilefor use when soldering a surface mount device to a printedcircuit board. This profile will vary among solderingsystems but it is a good starting point. Factors that canaffect the profile include the type of soldering system inuse, density and types of components on the board, type ofsolder used, and the type of board or substrate materialbeing used. This profile shows temperature versus time.

The line on the graph shows the actual temperature thatmight be experienced on the surface of a test board at ornear a central solder joint. The two profiles are based on ahigh density and a low density board. The VitronicsSMD310 convection/infrared reflow soldering system wasused to generate this profile. The type of solder used was62/36/2 Tin Lead Silver with a melting point between177–1°C. When this type of furnace is used for solderreflow work, the circuit boards and solder joints tend toheat first. The components on the board are then heated byconduction. The circuit board, because it has a large surfacearea, absorbs the thermal energy more efficiently, thendistributes this energy to the components. Because of thiseffect, the main body of a component may be up to 30degrees cooler than the adjacent solder joints.

STEP 1PREHEATZONE 1󰁿RAMP\"200°CSTEP 2STEP 3VENTHEATING󰁿SOAK\"ZONES 2 & 5

󰁿RAMP\"STEP 5STEP 4

HEATINGHEATING

ZONES 3 & 6ZONES 4 & 7

󰁿SPIKE\"󰁿SOAK\"170°C160°CSTEP 6STEP 7

VENTCOOLING

205° TO 219°CPEAK ATSOLDER JOINTDESIRED CURVE FOR HIGHMASS ASSEMBLIES150°C150°C100°C100°C140°CSOLDER IS LIQUID FOR40 TO 80 SECONDS(DEPENDING ONMASS OF ASSEMBLY)50°CDESIRED CURVE FOR LOWMASS ASSEMBLIESTIME (3 TO 7 MINUTES TOTAL)TMAXFigure 6. Typical Solder Heating Profile

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

PACKAGE DIMENSIONSSOT–23 (TO–236AB)

CASE 318–08ISSUE AF

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH THICKNESS. MINIMUM LEAD THICKNESSIS THE MINIMUM THICKNESS OF BASEMATERIAL.AL312BSVGCDHKJDIMABCDGHJKLSVINCHESMINMAX0.11020.11970.04720.05510.03500.04400.01500.02000.07010.08070.00050.00400.00340.00700.01400.02850.03500.04010.08300.10390.01770.0236MILLIMETERSMINMAX2.803.041.201.400.1.110.370.501.782.040.0130.1000.0850.1770.350.690.1.022.102.0.450.60STYLE 8:

PIN 1.ANODE

2.NO CONNECTION3.CATHODE

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

PACKAGE DIMENSIONSTO–92 (TO–226AC)CASE 182–06ISSUE L

ABNOTES:

1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND ZONE R ISUNCONTROLLED.

4.LEAD DIMENSION IS UNCONTROLLED IN P ANDBEYOND DIMENSION K MINIMUM.

SEATINGPLANE

RLKDPJDIMABCDGHJKLNPRVXXDGHVCNSECTION X–XSTYLE 1:PIN 1.ANODE2.CATHODEINCHESMINMAX0.1750.2050.1700.2100.1250.1650.0160.0210.050 BSC0.100 BSC0.0140.0160.500---0.250---0.0800.105---0.0500.115---0.135---MILLIMETERSMINMAX4.455.214.325.333.184.190.4070.5331.27 BSC2.54 BSC0.360.4112.70---6.35---2.032.66---1.272.93---3.43---12Nhttp://onsemi.com

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MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209

Thermal Clad is a trademark of the Bergquist Company.

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changeswithout further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particularpurpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury ordeath may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and holdSCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonableattorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claimalleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center

4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.comFor additional information, please contact your localSales Representative.http://onsemi.com8MMBV2101LT1/D