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Method of fabrication of thin film resistor with 0

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专利名称:Method of fabrication of thin film resistor

with 0 TCR

发明人:Jeffrey R. Amadon,Anil K.

Chinthakindi,Kenneth J. Stein,Kwong H.Wong

申请号:US10250075申请日:20030602公开号:US07012499B2公开日:20060314

专利附图:

摘要:A thin film resistor that has a substantially zero TCR is provided as well as a

method for fabricating the same. The thin film resistor includes at least two resistormaterials located over one another. Each resistor material has a different temperaturecoefficient of resistivity such that the effective temperature coefficient of resistivity of thethin film resistor is substantially 0 ppm/° C. The thin film resistor may be integrated into ainterconnect structure or it may be integrated with a metal-insulator-metal capacitor(MIMCAP).

申请人:Jeffrey R. Amadon,Anil K. Chinthakindi,Kenneth J. Stein,Kwong H. Wong

地址:Poughkeepsie NY US,Fishkill NY US,Sandy Hook CT US,Wappingers Falls NY US

国籍:US,US,US,US

代理机构:Scully, Scott, Murphy & Presser

代理人:James J. Cioffi, Esq.

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