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STP25N06STP25N06FI
N-CHANNELENHANCEMENTMODE
POWERMOSTRANSISTOR
TYPESTP25N06STP25N06FI
ssssssss
VDSS60V60V
RDS(on)<0.065Ω<0.065Ω
ID25A16A
TYPICALRDS(on)=0.048Ω
AVALANCHERUGGEDTECHNOLOGY100%AVALANCHETESTED
REPETITIVEAVALANCHEDATAAT100oCLOWGATECHARGE
HIGHCURRENTCAPABILITY
175oCOPERATINGTEMPERATUREAPPLICATIONORIENTEDCHARACTERIZATION
1
2
3
12
3
TO-220ISOWATT220
APPLICATIONSsHIGHCURRENT,HIGHSPEEDSWITCHINGsSOLENOIDANDRELAYDRIVERSsREGULATORSsDC-DC&DC-ACCONVERTERSsMOTORCONTROL,AUDIOAMPLIFIERSsAUTOMOTIVEENVIRONMENT(INJECTION,ABS,AIR-BAG,LAMPDRIVERS,Etc.)
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolVDSVDGRVGSIDIDIDM(•)PtotVISOTstgTj
Parameter
STP25N06
Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage
DrainCurrent(continuous)atTc=25oCDrainCurrent(continuous)atTc=100oCDrainCurrent(pulsed)
TotalDissipationatTc=25oCDeratingFactor
InsulationWithstandVoltage(DC)StorageTemperature
Max.OperatingJunctionTemperature
2517100900.6
-65to175
1756060±20
1611100400.272000
Value
STP25N06FI
VVVAAAWW/oCV
oo
Unit
CC
(•)Pulsewidthlimitedbysafeoperatingarea
December19961/10
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STP25N06/FI
THERMALDATA
TO-220
Rthj-caseRthj-ambRthc-sink
Tl
ThermalResistanceJunction-case
Max
1.57
62.50.5300
ThermalResistanceJunction-ambientMaxThermalResistanceCase-sinkTypMaximumLeadTemperatureForSolderingPurpose
ISOWATT220
3.75
ooo
C/WC/WC/WoC
AVALANCHECHARACTERISTICS
SymbolIAREASEARIAR
Parameter
AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax,δ <1%)SinglePulseAvalancheEnergy
(startingTj=25oC,ID=IAR,VDD=25V)RepetitiveAvalancheEnergy
(pulsewidthlimitedbyTjmax,δ <1%)
AvalancheCurrent,RepetitiveorNot-Repetitive(Tc=100oC,pulsewidthlimitedbyTjmax,δ <1%)
o
MaxValue
251002517
UnitAmJmJA
ELECTRICALCHARACTERISTICS(Tcase=25Cunlessotherwisespecified)OFF
SymbolV(BR)DSSIDSSIGSS
Parameter
Drain-source
BreakdownVoltage
TestConditions
ID=250µA
VGS=0
Min.60
110±100
Typ.
Max.
UnitVµAµAnA
ZeroGateVoltageVDS=MaxRating
DrainCurrent(VGS=0)VDS=MaxRatingx0.8Gate-bodyLeakageCurrent(VDS=0)
VGS=± 20V
Tc=125C
o
ON(∗)
SymbolVGS(th)RDS(on)ID(on)
Parameter
GateThresholdVoltageVDS=VGSStaticDrain-sourceOnResistance
OnStateDrainCurrent
VGS=10V
TestConditionsID=250µAID=12.5A
25Min.2
Typ.2.90.048
Max.40.065
UnitVΩA
VDS>ID(on)xRDS(on)maxVGS=10V
DYNAMIC
Symbolgfs(∗)CissCossCrss
Parameter
Forward
TransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitance
TestConditions
VDS>ID(on)xRDS(on)maxVDS=25V
f=1MHz
ID=12.5AVGS=0
Min.7
Typ.1170032090
900450150Max.
UnitSpFpFpF
2/10
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STP25N06/FI
ELECTRICALCHARACTERISTICS(continued)SWITCHINGON
Symboltd(on)tr(di/dt)on
Parameter
Turn-onTimeRiseTime
Turn-onCurrentSlope
TestConditions
VDD=30VID=3A
VGS=10VRG=50 Ω
(seetestcircuit,figure3)VDD=40VID=25A
VGS=10VRG=50 Ω
(seetestcircuit,figure5)VDD=40V
ID=25A
VGS=10V
Min.
Typ.3090230
Max.45130
UnitnsnsA/µs
QgQgsQgdTotalGateChargeGate-SourceChargeGate-DrainCharge26
40
nCnCnC
SWITCHINGOFF
Symboltr(Voff)tftc
Parameter
Off-voltageRiseTimeFallTime
Cross-overTime
TestConditions
VDD=40VID=25A
VGS=10VRG=50 Ω
(seetestcircuit,figure5)
Min.
Typ.8080170
Max.120120250
Unitnsnsns
SOURCEDRAINDIODE
SymbolISDISDM(•)VSD(∗)trrQrrIRRM
Parameter
Source-drainCurrentSource-drainCurrent(pulsed)
ForwardOnVoltageReverseRecoveryTime
ReverseRecoveryCharge
ReverseRecoveryCurrent
ISD=25A
VGS=0
800.225.5
ISD=25Adi/dt=100A/µsVDD=30VTj=150oC(seetestcircuit,figure5)
TestConditions
Min.
Typ.
Max.251001.5
UnitAAVnsµCA
(∗)Pulsed:Pulseduration=300µs,dutycycle1.5%(•)Pulsewidthlimitedbysafeoperatingarea
SafeOperatingAreasForTO-220SafeOperatingAreasForISOWATT220
3/10
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STP25N06/FI
ThermalImpedeanceForTO-220
ThermalImpedanceForISOWATT220
DeratingCurveForTO-220DeratingCurveForISOWATT220
OutputCharacteristicsTransferCharacteristics
4/10
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STP25N06/FI
Transconductance
StaticDrain-sourceOnResistance
GateChargevsGate-sourceVoltageCapacitanceVariations
NormalizedGateThresholdVoltagevsTemperature
NormalizedOnResistancevsTemperature
5/10
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STP25N06/FI
Turn-onCurrentSlope
Turn-offDrain-sourceVoltageSlope
Cross-overTimeSwitchingSafeOperatingArea
AccidentalOverloadAreaSource-drainDiodeForwardCharacteristics
6/10
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STP25N06/FI
Fig.1:UnclampedInductiveLoadTestCircuits
Fig.2:UnclampedInductiveWaveforms
Fig.3:SwitchingTimesTestCircuitsForResistiveLoad
Fig.4:GateChargeTestCircuit
Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeReverseRecoveryTime
7/10
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STP25N06/FI
TO-220MECHANICALDATA
DIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.
13.02.6515.256.23.53.750.490.611.141.144.952.410.0
16.4
14.02.9515.756.63.933.85
0.5110.1040.6000.2440.1370.147
mm
MIN.4.401.232.40
1.27
0.700.881.701.705.152.710.40
0.0190.0240.0440.0440.1940.0940.393
0.5
0.5510.1160.6200.2600.1540.151
TYP.
MAX.4.601.322.72
MIN.0.1730.0480.094
0.050
0.0270.0340.0670.0670.2030.1060.409
inchTYP.
MAX.0.1810.0510.107
ACD1L2
F1DG1EDia.
F2FL5
L7
L6
L9
L4
G8/10
H2P011C
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STP25N06/FI
ISOWATT220MECHANICALDATA
DIM.
MIN.
ABDEFF1F2GG1HL2L3L4L6L7Ø
28.69.815.9934.42.52.50.40.751.151.154.952.410
16
30.610.616.49.33.2
1.1260.3850.6260.3540.118
mmTYP.
MAX.4.62.72.750.711.71.75.22.710.4
MIN.0.1730.0980.0980.0150.0300.0450.0450.1950.0940.393
0.630
1.2040.4170.50.3660.126
inchTYP.
MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409
ABL3
L6
L7
F1DØ
FG1EHF2123
L2
L4
P011G
G9/10
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STP25N06/FI
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©1996SGS-THOMSONMicroelectronics-PrintedinItaly-AllRightsReserved
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