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专利名称：Vacuum integrated electronic device and
manufacturing process thereof
发明人：Davide Giuseppe Patti,Myung Sung Kim申请号：US151505申请日：20160510公开号：US09754756B2公开日：20170905
专利附图：
摘要：A vacuum integrated electronic device has an anode region of conductivematerial; an insulating region on top of the anode region; a cavity extending through theinsulating region and having a sidewall; and a cathode region. The cathode region has atip portion extending peripherally within the cavity, adjacent to the sidewall of the cavity.The cathode region is formed by tilted deposition, carried out at an angle of 30-60° withrespect to a perpendicular to the surface of device.
申请人：STMICROELECTRONICS S.R.L.,STMICROELECTRONICS PTE LTD
地址：Agrate Brianza IT,Singapore SG
国籍：IT,SG
代理机构：Seed IP Law Group LLP
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