FIN FIELD EFFECT TRANSISTOR

专利名称：FIN FIELD EFFECT TRANSISTOR发明人：Hung-Ta Lin,Chu-Yun Fu,Hung-Ming

Chen,Shu-Tine Yang,Shin-Yeh Huang

申请号：US14960807申请日：20151207

公开号：US20160087079A1公开日：20160324

专利附图：

摘要：A method of fabricating a fin field effect transistor (FinFET) including forming afirst insulation region and a second insulation region and fin there between. The methodfurther includes forming a gate stack over a portion of the fin and over a portion of the

first and second insulation regions. The method further includes tapering the topsurfaces of the first and second insulation regions not covered by the gate stack.

申请人：Taiwan Semiconductor Manufacturing Company, Ltd.

地址：Hsin-Chu TW

国籍：TW

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