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专利名称：Silicon microstructure and manufacture
thereof
发明人：Field, Leslie A.,Barth, Phillip W.申请号：EP95300828.1申请日：19950209公开号：EP0674194A3公开日：19960911
专利附图：
摘要：A flexible and efficient bulk micromachining method provides a microstructurebounded by substantially planar surfaces meeting only at substantially right angle cornerfeatures. The microstructure is useful as a spacer in assembly processes where high
accuracy is required, such as precise positioning of optical fibers or conductors. Themicrostructure includes a shelf feature (26) disposed along a height of the
microstructure, which is required for some applications. The bulk micromachining includesproviding a first substrate (1) having a top planar surface and an opposing planar surface.The opposing surface of the substrate is anisotropically etched to provide a first thinnedregion (20). The top surface of the first substrate is anisotropically etched so that a firstrecessed feature (24) having a vertical side is made integral with the first thinned region.A second substrate (2) having a top planar surface and an opposing planar surface isprovided. The opposing surface of the second substrate is anisotropically etched toprovide a second thinned region (22). The top surface of the second substrate is
anisotropically etched so that a second recessed feature (26) having a vertical side wall ismade integral with the second thinned region. The top surface of the first substrate isaligned and coupled with the top surface of the second substrate to produce the desiredmicrostructure. The substrates are cut or sawn to free the microstructure.
申请人：Hewlett-Packard Company
地址：3000 Hanover Street Palo Alto, California 94304 US
国籍：US
代理机构：Jehan, Robert
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