专利内容由知识产权出版社提供
专利名称：NANOSHEET AND NANOWIRE DEVICES
HAVING SOURCE/DRAIN STRESSORS ANDMETHODS OF MANUFACTURING THE SAME
发明人：Jorge A. Kittl,Wei-E Wang,Mark S. Rodder申请号：US15340951申请日：20161101
公开号：US20170271514A1公开日：20170921
专利附图：
摘要：A method of manufacturing a nanosheet or nanowire device from a stackincluding an alternating arrangement of sacrificial layers and channel layers on a
substrate. The method includes deep etching portions of the stack to form electroderecesses for a source electrode and a drain electrode, forming conductive passivationlayers in the electrode recesses, and epitaxially growing the source and drain electrodesin the electrode recesses. Each conductive passivation layer extends at least partiallyalong a side of one of the electrode recesses. Portions of the substrate at lower ends ofthe electrode recesses are uncovered by the conductive passivation layers. The sourceand drain electrodes are grown from the substrate and the conductive passivation layerssubstantially inhibit the source and drain electrodes from being grown from the channellayers.
申请人：Samsung Electronics Co., Ltd.
地址：Suwon-si KR
国籍：KR
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