IS61C1024ALISC1024AL
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
JANUARY 2005®
FEATURES
•High-speed access time: 12, 15 ns•Low active power: 160 mW (typical)
•Low standby power: 1000 µW (typical) CMOSstandby
•Output Enable (OE) and two Chip Enable(CE1 and CE2) inputs for ease in applications•Fully static operation: no clock or refreshrequired
•TTL compatible inputs and outputs•Single 5V (±10%) power supply
•Commercial, industrial, and automotive tempera-ture ranges available•Lead free available
DESCRIPTION
The ISSI IS61C1024AL/ISC1024AL is a very high-speed,low power, 131,072-word by 8-bit CMOS static RAMs. Theyare fabricated using ISSI's high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields higherperformance and low power consumption devices.When CE1 is HIGH or CE2 is LOW (deselected), the deviceassumes a standby mode at which the power dissipationcan be reduced by using CMOS input levels.
Easy memory expansion is provided by using two ChipEnable inputs, CE1 and CE2. The active LOW Write Enable(WE) controls both writing and reading of the memory.The IS61C1024AL/ISC1024AL is available in 32-pin 300-mil SOJ, 32-pin 400-mil SOJ, 32-pin TSOP (Type I, 8x20),and 32-pin sTSOP (Type I, 8 x 13.4) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16DECODER128K x 8MEMORY ARRAYVDDGNDI/ODATACIRCUITI/O0-I/O7COLUMN I/OCE1CE2OEWECONTROLCIRCUITCopyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
1
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IS61C1024AL, ISC1024AL
PIN CONFIGURATION
32-Pin SOJ
NCA16A14A12A7A6A5A4A3A2A1A0I/O0I/O1I/O2GND12345671011121314151632313029282726252423222120191817VDDA15CE2WEA13A8A9A11OEA10CE1I/O7I/O6I/O5I/O4I/O3ISSI
12345671011121314151632313029282726252423222120191817OEA10CE1I/O7I/O6I/O5I/O4I/O3GNDI/O2I/O1I/O0A0A1A2A3®
PIN CONFIGURATION
32-Pin TSOP (Type 1) (T) and sTSOP (Type 1) (H)
A11A9A8A13WECE2A15VDDNCA16A14A12A7A6A5A4PIN DESCRIPTIONS
A0-A16CE1CE2OEWEI/O0-I/O7VDDGND
Address InputsChip Enable 1 InputChip Enable 2 InputOutput Enable InputWrite Enable InputInput/OutputPowerGround
OPERATING RANGE (IS61C1024AL)
Range
CommercialIndustrial
Ambient Temperature0°C to +70°C-40°C to +85°C
VDD
5V ± 10%5V ± 10%
OPERATING RANGE (ISC1024AL)
Range
Automotive
Ambient Temperature-40°C to +125°C
VDD
5V ± 10%
TRUTH TABLE
Mode
Not Selected(Power-down)Output DisabledReadWrite
WEXXHHL
CE1HXLLL
CE2XLHHH
OEXXHLX
I/O OperationHigh-ZHigh-ZHigh-ZDOUTDIN
VDD CurrentISB1, ISB2ISB1, ISB2ICC1, ICC2ICC1, ICC2ICC1, ICC2
2Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
ABSOLUTE MAXIMUM RATINGS(1)
SymbolVTERMTSTGPTIOUT
Parameter
Terminal Voltage with Respect to GNDStorage TemperaturePower Dissipation
DC Output Current (LOW)
Value–0.5 to +7.0–65 to +150
1.520
UnitV°CWmA
ISSI
®
Notes:
1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may causepermanent damage to the device. This is a stress rating only and functional operationof the device at these or any other conditions above those indicated in the opera-tional sections of this specification is not implied. Exposure to absolute maximumrating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
SymbolCINCOUT
ParameterInput CapacitanceOutput Capacitance
ConditionsVIN = 0VVOUT = 0V
Max.57
UnitpFpF
Notes:
1.Tested initially and after any design or process changes that may affect these parameters.2.Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
SymbolParameterVOHVOLVIHVILILI
Output HIGH VoltageOutput LOW VoltageInput HIGH VoltageInput LOW Voltage(1)Input Leakage
GND ≤ VIN ≤ VDD
Com.Ind.Auto.Com.Ind.Auto.
Test Conditions
VDD = Min., IOH = –4.0 mAVDD = Min., IOL = 8.0 mA
Min.2.4—2.2–0.3–1–2–5–1–2–5
Max.—0.4VDD + 0.50.8125125
UnitVVVVµA
ILOOutput Leakage
GND ≤ VOUT ≤ VDDOutputs Disabled
µA
Note:
1.VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
ISSI
-12 nsMin.Max.Com.Ind.Auto.Com.Ind.Auto.typ.(2)Com.Ind.Auto.Com.Ind.Auto.typ.(2)———————3540—4550—3211.5————400450—2005002µAmA5545mA -15 nsMin.Max.UnitmA®
IS61C1024AL/ISC1024AL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
SymbolParameterICC1VDD OperatingSupply CurrentVDD Dynamic OperatingSupply CurrentTest ConditionsVDD = VDD MAX., CE1 = VILIOUT = 0 mA, f = 0VDD = VDD MAX., CE1 = VILIOUT = 0 mA, f = fMAXICC2ISB1TTL Standby Current(TTL Inputs)VDD = VDD MAX.,VIN = VIH or VILCE1 ≥ VIH, f = 0 orCE2 ≤ VIL, f = 0VDD = VDD MAX.,CE1 ≥ VDD – 0.2V,CE2 ≤ 0.2VVIN ≥ VDD – 0.2V, orVIN ≤ 0.2V, f = 0ISB2CMOS StandbyCurrent (CMOS Inputs)Note:
1.At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.2. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.
4Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
ParameterRead Cycle TimeAddress Access TimeOutput Hold TimeCE1 Access TimeCE2 Access TimeOE Access TimeOE to Low-Z OutputOE to High-Z OutputCE1 to Low-Z OutputCE2 to Low-Z OutputCE1 or CE2 to High-Z OutputCE1 or CE2 to Power-UpCE1 or CE2 to Power-Down
-12Min.Max.
12—3———002200—
—12—12126—6——7—12
-15Min.Max.15—3———002200—
—15—15157—6——8—12
Unitnsnsnsnsnsnsnsnsnsnsnsnsns
ISSI
®
tRCtAAtOHAtACE1tACE2tDOEtLZOE(2)tHZOE(2)tLZCE1(2)tLZCE2(2)tHZCE(2)tPU(3)tPD(3)
Notes:
1.Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulselevels of 0 to 3.0V and output loading specified in Figure 1.
2.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.3.Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall TimesInput and Output Timingand Reference LevelOutput Load
Unit0V to 3.0V3 ns1.5VSee Figures 1 and 2
AC TEST LOADS
480 Ω5VOUTPUT30 pFIncludingjig andscope255 Ω5VOUTPUT5 pFIncludingjig andscope255 Ω480 ΩFigure 1Figure 2
5
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
ISSI
t RC®
AC WAVEFORMSREAD CYCLE NO. 1(1,2)
ADDRESSt AAt OHADOUTPREVIOUS DATA VALIDt OHADATA VALIDREAD1.epsREAD CYCLE NO. 2(1,3)
t RCADDRESSt AAOEt OHAt HZOEt DOECE1t LZOECE2t LZCE1t LZCE2DOUTt ACE1t ACE2HIGH-ZDATA VALIDt HZCE1t HZCE2CE2_RD2.epsNotes:
1.WE is HIGH for a Read Cycle.
2.The device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
3.Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
6Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
ISSI
-12 nsMin.Max.
12101010001070—2
—————————7—
-15 nsMin.Max.151212120012100—2
—————————7—
Unitnsnsnsnsnsnsnsnsnsnsns
®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)
Symbol
ParameterWrite Cycle TimeCE1 to Write EndCE2 to Write End
Address Setup Time to Write EndAddress Hold from Write EndAddress Setup TimeWE Pulse WidthData Setup to Write EndData Hold from Write EndWE LOW to High-Z OutputWE HIGH to Low-Z Output
tWCtSCE1tSCE2tAWtHAtSAtPWE(3)tSDtHDtHZWE(4)tLZWE(4)
Notes:
1.Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0Vand output loading specified in Figure 1.
2.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states toinitiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to therising or falling edge of the signal that terminates the Write.3.Tested with OE HIGH.
4.Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE1 Controlled, OE is HIGH or LOW) (1)t WCADDRESSVALID ADDRESSISSI
®
t SACE1t SCE1t SCE2t HACE2WEt AWt PWE1t PWE2t HZWEt LZWEHIGH-ZDOUTDATA UNDEFINEDt SDDINt HDDATAIN VALIDCE2_WR1.epsWRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2)t WCADDRESSVALID ADDRESSt HAOECE1CE2WELOWHIGHt AWt PWE1t SAt HZWEDATA UNDEFINEDHIGH-Zt LZWEDOUTt SDDINt HDDATAIN VALIDCE2_WR2.epsNotes:
1.The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid statesto initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referencedto the rising or falling edge of the signal that terminates the Write.2.I/O will assume the High-Z state if OE = VIH.
8Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1)t WCADDRESSOECE1VALID ADDRESSISSI
®
LOWLOWHIGHt HACE2t AWt PWE2WEt SADOUTDATA UNDEFINEDt HZWEHIGH-Zt LZWEt SDDINt HDDATAIN VALIDCE2_WR3.epsIntegrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
DATA RETENTION SWITCHING CHARACTERISTICS
SymbolParameterVDD for Data RetentionData Retention CurrentTest ConditionSee Data Retention WaveformVDD = 2.0V, CE1 ≥ VDD – 0.2Vor CE2 ≤ 0.2V
VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2VSee Data Retention WaveformSee Data Retention WaveformCom.Ind.Auto.Min.2.0———0200——Typ.(1)ISSI
Max.5.5400450500——UnitVµA®
VDRIDRtSDRtRDRNote:Data Retention Setup TimeRecovery TimensnstRC1. Typical Values are measured at VDD = 5V, TA = 25oC and not 100% tested.DATA RETENTION WAVEFORM (CE1 Controlled)
tSDRVDD4.5VData Retention ModetRDR2.2VVDRCE1 ≥ VDD - 0.2VCE1GNDDATA RETENTION WAVEFORM (CE2 Controlled)
Data Retention ModeVDD4.5VCE22.2VVDR0.4VGNDCE2 ≤ 0.2VtSDRtRDR10Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
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IS61C1024AL, ISC1024AL
ORDERING INFORMATION: IS61C1024ALCommercial Range: 0°C to +70°C
Speed (ns)
12
Order Part No.IS61C1024AL-12JIS61C1024AL-12T
Package
300-mil Plastic SOJTSOP (Type I)
ISSI
®
ORDERING INFORMATION: IS61C1024ALIndustrial Range: –40°C to +85°C
Speed (ns)
12
Order Part No.IS61C1024AL-12JIIS61C1024AL-12JLIIS61C1024AL-12KIIS61C1024AL-12KLIIS61C1024AL-12HIIS61C1024AL-12TIIS61C1024AL-12TLI
Package
300-mil Plastic SOJ
300-mil Plastic SOJ, Lead-free400-mil Plastic SOJ
400-mil Plastic SOJ, Lead-freesTSOP (Type I)TSOP (Type I)
TSOP (Type I), Lead-free
ORDERING INFORMATION: ISC1024ALAutomotive Range: –40°C to +125°C
Speed (ns)
15
Order Part No.ISC1024AL-15KA3ISC1024AL-15TA3
Package
400-mil Plastic SOJTSOP (Type I)
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. B01/24/05
11
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PACKAGING INFORMATION
Plastic STSOP - 32 pinsPackage Code: H (Type I)A2AISSI
A1®
1NEbeD1 DSSEATING PLANELαCPlastic STSOP (H - Type I)MillimetersInchesSymbolMinMaxMinMaxRef. Std.N 32A—1.25—0.049A10.05—0.002—A20.951.050.0370.041b0.170.230.0070.009C0.140.160.00550.0063D13.2013.600.5200.535D111.7011.900.4610.469E7.908.100.3110.319e 0.50 BSC 0.020 BSCL0.300.700.0120.028S 0.28 Typ. 0.011 Typ.α0°5°0°5°Notes:1.Controlling dimension: millimeters, unless otherwisespecified.2.BSC = Basic lead spacing between centers.3.Dimensions D1 and E do not include mold flash protru-sions and should be measured from the bottom of the package.4.Formed leads shall be planar with respect to one anotherwithin 0.004 inches at the seating plane.Integrated Silicon Solution, Inc.PK13197H32 Rev. B 04/21/03
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PACKAGING INFORMATION
400-mil Plastic SOJPackage Code: KISSI
Notes:1. Controlling dimension: millimeters.2. BSC = Basic lead spacing between centers.3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package.4. Reference document: JEDEC MS-027.®
N N/2+1E1E1N/2DASEATING PLANEbCA2eBA1E2MillimetersInchesMillimetersInchesMillimetersInchesSymbolMinMaxMinMaxMinMaxMinMaxMinMaxMinMaxNo. Leads (N)283236A3.253.750.1280.1483.253.750.1280.1483.253.750.1280.148A10. —0.025 —0. —0.025 —0. —0.025 —A22.08 —0.082 —2.08 —0.082 —2.08 —0.082 —B0.380.510.0150.0200.380.510.0150.0200.380.510.0150.020b0.660.810.0260.0320.660.810.0260.0320.660.810.0260.032C0.180.330.0070.0130.180.330.0070.0130.180.330.0070.013D18.2918.540.7200.73020.8221.080.8200.83023.3723.620.9200.930E11.0511.300.4350.44511.0511.300.4350.44511.0511.300.4350.445E110.0310.290.3950.40510.0310.290.3950.40510.0310.290.3950.405E2 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSCe 1.27 BSC 0.050 BSC1.27 BSC 0.050 BSC1.27 BSC 0.050 BSCCopyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.F10/29/03
元器件交易网www.cecb2b.com
PACKAGING INFORMATION
ISSI
®
MillimetersInchesMillimetersInchesMillimetersInchesSymbolMinMaxMinMaxMinMaxMinMaxMinMaxMinMaxNo. Leads (N)404244A3.253.750.1280.1483.253.750.1280.1483.253.750.1280.148A10. —0.025 —0. —0.025 —0. —0.025 —A22.08 —0.082 —2.08 —0.082 —2.08 —0.082 —B0.380.510.0150.0200.380.510.0150.0200.380.510.0150.020b0.660.810.0260.0320.660.810.0260.0320.660.810.0260.032C0.180.330.0070.0130.180.330.0070.0130.180.330.0070.013D25.9126.161.0201.03027.1827.431.0701.08028.4528.701.1201.130E11.0511.300.4350.44511.0511.300.4350.44511.0511.300.4350.445E110.0310.290.3950.40510.0310.290.3950.40510.0310.290.3950.405E2 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSC 9.40 BSC 0.370 BSCe 1.27 BSC 0.050 BSC1.27 BSC 0.050 BSC1.27 BSC 0.050 BSCCopyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
2Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. F10/29/03
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PACKAGING INFORMATION
300-mil Plastic SOJPackage Code: J
NISSI
®
E1E1DASEATING PLANEBA2CebA1E2MILLIMETERSSym.N0.LeadsAA1A2bBCDEE1E2e— 0.2.410.410.660.2017.028.267.496.27INCHESMin.Typ.Max.Min.Typ.Max.24/26——————————3.56—2.670.510.810.2517.278.767.757.29Notes:1.Controlling dimension: inches, unless otherwisespecified.2.BSC = Basic lead spacing between centers.3.Dimensions D and E1 do not include mold flashprotrusions and should be measured from the bottom ofthe package.4.Formed leads shall be planar with respect to oneanother within 0.004 inches at the seating plane.—0.0950.0160.0260.0080.6700.325 0.2950.247 —0.140—0.1050.0200.0320.0100.6800.3450.3050.287————————0.025 —1.27 BSC0.050 BSCCopyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.D02/25/03
元器件交易网www.cecb2b.com
PACKAGING INFORMATION
300-mil Plastic SOJPackage Code: J
ISSI
®
MILLIMETERS
Sym.
N0.LeadsAA1A2bBCDEE1E2e
— 0.2.410.410.660.2018.298.267.496.27
INCHESMin.Typ.Max.
Sym.
N0.Leads
MILLIMETERSMin.Typ.Max.
32— 0.2.410.410.660.2020.838.267.496.27
——————————
3.56—2.670.510.810.2521.088.767.757.29
—
INCHESMin.Typ.Max.
Min.Typ.Max.
28——————————
3.56—2.670.510.810.2518.548.767.757.29
—0.0950.0160.0260.0080.7200.325 0.2950.247
—————————
0.140—0.1050.0200.0320.0100.7300.3450.3050.287
AA1A2bBCDEE1E2e
—————————
0.140—0.1050.0200.0320.0100.8300.3450.3050.287
0.025 —0.025 —0.0950.0160.0260.0080.8200.325 0.2950.247
1.27 BSC0.050 BSC1.27 BSC0.050 BSC
2Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev. D02/25/03
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PACKAGING INFORMATION
Plastic TSOP-Type IPackage Code: T (32-pin)1ISSI
®
EHNDSEATING PLANESAeBA1LαCMILLIMETERSINCHESSymbolMin.Max.Min.Max.No. Leads32A—1.20—0.047A10.050.250.0020.010B0.170.230.0070.009C0.120.170.0050.007D7.908.100.3110.319E18.3018.500.7200.728H19.8020.200.7800.795e0.50 BSC0.020 BSCL0.400.600.0160.024α0°8°0°8°S 0.25 REF 0.010 REFNotes:1.Controlling dimension: millimeters, unlessotherwise specified.2.BSC = Basic lead spacing between centers.3.Dimensions D and E do not include moldflash protrusions and should be measuredfrom the bottom of the package.4.Formed leads shall be planar with respectto one another within 0.004 inches at theseating plane.Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any timewithout notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised toobtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774Rev.C06/13/03
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