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专利名称：Nanometer-scale transistor architecture
providing enhanced carrier mobility
发明人：Alexander A. Balandin,Vladimir A. Fonoberov申请号：US11754618申请日：20070529公开号：US08097922B1公开日：20120117
专利附图：
摘要：The present invention provides a nanometer-scale transistor architectureproviding enhanced carrier mobility. In particular, a portion of a channel of a transistor issubstantially surrounded with an acoustically hard material to form a barrier shell about
the channel. The barrier shell functions to confine phonons in the channel. Confining thephonons in the channel reduces the extent to which atoms in the crystal lattice structureof the channel move as they vibrate. Restricting the extent that the atoms vibrate in thecrystal lattice of the channel significantly reduces the scattering of electrons or holestraveling through the channel. In one embodiment of the invention, the thickness of thechannel is in the order of the thermal phonon wavelength of the material forming thechannel, and the barrier shell is acoustically harder than the channel. The benefits of thepresent invention may be provided without requiring strain engineering.
申请人：Alexander A. Balandin,Vladimir A. Fonoberov
地址：Riverside CA US,Goleta CA US
国籍：US,US
代理机构：Withrow & Terranova, P.L.L.C.
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