STD2HNK60Z-1资料

STQ2HNK60ZR-AP

STF2HNK60Z-STD2HNK60Z-1

N-CHANNEL600V-4.4Ω -2.0ATO-92/TO-220FP/IPAK

Zener-ProtectedSuperMESH™MOSFET

TYPE

STQ2HNK60ZR-APSTD2HNK60Z-1STF2HNK60Z

󰀁󰀁󰀁󰀁󰀁󰀁

VDSS600V600V600V

RDS(on)<4.8Ω<4.8Ω<4.8Ω

ID0.5A2.0A2.0A

PW3W45W20W

123TYPICALRDS(on)=4.4Ω

EXTREMELYHIGHdv/dtCAPABILITYESDIMPROVEDCAPABILITY100%AVALANCHETESTED

NEWHIGHVOLTAGEBENCHMARKGATECHARGEMINIMIZED

TO-92(Ammopack)TO-220FP123IPAKDESCRIPTION

TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistak-entoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseriescomple-mentsSTfullrangeofhighvoltageMOSFETsin-cludingrevolutionaryMDmesh™products.

INTERNALSCHEMATICDIAGRAMAPPLICATIONS

󰀁ACADAPTORSANDBATTERYCHARGERS󰀁SWITHMODEPOWERSUPPLIES(SMPS)

ORDERCODES

PARTNUMBERSTD2HNK60Z-1STQ2HNK60ZR-APSTF2HNK60Z

MARKINGD2HNK60ZQ2HNK60ZRF2HNK60Z

PACKAGEIPAKTO-92TO-220FP

PACKAGING

TUBEAMMOPAKTUBE

April20041/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

ABSOLUTEMAXIMUMRATINGS

SymbolVDSVDGRVGSIDIDIDM(󰀁)PTOTVESD(G-S)dv/dt(1)VISOTjTstg

Parameter

IPAK

Drain-sourceVoltage(VGS=0)Drain-gateVoltage(RGS=20kΩ)Gate-sourceVoltage

DrainCurrent(continuous)atTC=25°CDrainCurrent(continuous)atTC=100°CDrainCurrent(pulsed)TotalDissipationatTC=25°CDeratingFactor

GatesourceESD(HBM-C=100pF,R=1.5KΩ)PeakDiodeRecoveryvoltageslopeInsulationWithstandVoltage(DC)OperatingJunctionTemperatureStorageTemperature

--2.01.268450.36

ValueTO-220FP600600±302.0(*)1.26(*)8(*)200.1620004.52500-55to150

--0.50.32230.025TO-92

VVVAAAWW/°CVV/nsV°CUnit

(󰀁)Pulsewidthlimitedbysafeoperatingarea

(1)ISD≤2A,di/dt≤200A/µs,VDD≤V(BR)DSS,Tj≤TJMAX.(*)CurrentLimitedbypackage

THERMALDATA

IPAK

Rthj-caseRthj-ambRthj-lead

Tl

ThermalResistanceJunction-caseMaxThermalResistanceJunction-ambientMaxThermalResistanceJunction-leadMaxMaximumLeadTemperatureForSolderingPurpose

2.77100--300

TO-220FP6.2562.5--300

TO-92--12040260

°C/W°C/W°C/W°C

AVALANCHECHARACTERISTICS

SymbolIAREAS

Parameter

AvalancheCurrent,RepetitiveorNot-Repetitive(pulsewidthlimitedbyTjmax)

SinglePulseAvalancheEnergy

(startingTj=25°C,ID=IAR,VDD=50V)

MaxValue

2120

UnitAmJ

GATE-SOURCEZENERDIODE

SymbolBVGSO

Parameter

Gate-SourceBreakdownVoltage

TestConditionsIgs=±1mA(OpenDrain)

Min.30

Typ.

Max.

UnitV

PROTECTIONFEATURESOFGATE-TO-SOURCEZENERDIODES

Thebuilt-inback-to-backZenerdiodeshavespecificallybeendesignedtoenhancenotonlythedevice’sESDcapability,butalsotomakethemsafelyabsorbpossiblevoltagetransientsthatmayoccasionallybeappliedfromgatetosource.InthisrespecttheZenervoltageisappropriatetoachieveanefficientandcost-effectiveinterventiontoprotectthedevice’sintegrity.TheseintegratedZenerdiodesthusavoidtheusageofexternalcomponents.

2/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

ELECTRICALCHARACTERISTICS(TCASE=25°CUNLESSOTHERWISESPECIFIED)ON/OFF

SymbolV(BR)DSSIDSSIGSSVGS(th)RDS(on)

Parameter

Drain-source

BreakdownVoltageZeroGateVoltage

DrainCurrent(VGS=0)Gate-bodyLeakageCurrent(VDS=0)GateThresholdVoltageStaticDrain-sourceOnResistance

TestConditions

ID=1mA,VGS=0

VDS=MaxRating

VDS=MaxRating,TC=125°CVGS=±20V

VDS=VGS,ID=50µAVGS=10V,ID=1.0A

3

3.754.4

Min.600

150±104.54.8

Typ.

Max.

UnitVµAµAµAVΩ

DYNAMIC

Symbolgfs(1)CissCossCrssCosseq.(3)td(on)trtd(off)tfQgQgsQgd

Parameter

ForwardTransconductanceInputCapacitanceOutputCapacitanceReverseTransferCapacitanceEquivalentOutputCapacitanceTurn-onDelayTimeRiseTime

Turn-offDelayTimeFallTime

TotalGateChargeGate-SourceChargeGate-DrainCharge

TestConditions

VDS=15V,ID=1.0A

VDS=25V,f=1MHz,VGS=0

Min.

Typ.1.52803873010302350112.256

15Max.

UnitSpFpFpFpFnsnsnsnsnCnCnC

VGS=0V,VDS=0Vto480VVDD=300V,ID=1.0ARG=4.7ΩVGS=10V

(ResistiveLoadsee,Figure3)VDD=480V,ID=2.0A,VGS=10V

SOURCEDRAINDIODE

SymbolISDISDM(2)VSD(1)trrQrrIRRMtrrQrrIRRM

Parameter

Source-drainCurrent

Source-drainCurrent(pulsed)ForwardOnVoltageReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrentReverseRecoveryTimeReverseRecoveryChargeReverseRecoveryCurrent

ISD=2.0A,VGS=0ISD=2.0A,di/dt=100A/µsVDD=20V,Tj=25°C(seetestcircuit,Figure5)ISD=13A,di/dt=100A/µsVDD=20V,Tj=150°C(seetestcircuit,Figure5)

17844552005005

TestConditions

Min.

Typ.

Max.2.08.01.6

UnitAAVnsnCAnsnCA

Note:1.Pulsed:Pulseduration=300µs,dutycycle1.5%.

2.Pulsewidthlimitedbysafeoperatingarea.

3.Cosseq.isdefinedasaconstantequivalentcapacitancegivingthesamechargingtimeasCosswhenVDSincreasesfrom0to80%VDSS.

3/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

SafeOperatingAreaforTO-92

ThermalImpedanceforTO-92

SafeOperatingAreaforTO-220FPThermalImpedanceforTO-220FPSafeOperatingAreaforIPAKThermalImpedanceforIPAK4/12元器件交易网www.cecb2b.com

STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

OutputCharacteristicsTransferCharacteristicsTransconductanceStaticDrain-sourceOnResistanceGateChargevsGate-sourceVoltageCapacitanceVariations5/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

NormalizedGateTheresholdVoltagevsTemp.NormalizedOnResistancevsTemperatureSource-drainDiodeForwardCharacteristics

NormalizedBVDSSvsTemperature

MaximumAvalancheEnergyvsTemperature6/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

Fig.1:UnclampedInductiveLoadTestCircuit

Fig.2:UnclampedInductiveWaveform

Fig.3:SwitchingTimesTestCircuitForResistiveLoad

Fig.4:GateChargetestCircuit

Fig.5:TestCircuitForInductiveLoadSwitchingAndDiodeRecoveryTimes

7/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

TO-92 MECHANICAL DATAmm.MIN.4.320.3.453.302.411.1412.702.160.920.415°TYPMAX.4.950.514.953.942.671.4015.492.411.520.56MIN.0.1700.0140.1750.1300.0940.0440.500.0850.0360.0165°inchTYP.MAX.0.1940.0200.1940.1550.1050.0550.6100.0940.0600.022DIM.AbDEee1LRS1WV8/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

TO-92AMMOPACK

mm.

MIN.4.453.30

TYP

MAX.4.953.941.62.3

0.4112.55.652.44-217.55.78.518.515.53.8

1186912.76.352.54

0.5612.97.052.942196.39.250.520.516.5254.20.911

3-1

1

0.11-0.04

0.04

0.15

0.157

0.720.61

0.63

0.0160.490.220.09-0.080.690.220.33

0.710.230.350.50.250.1

MIN.0.1700.130

inchTYP.

MAX.0.1940.1550.060.090.0220.510.270.110.080.740.240.360.020.800.650.980.160.0350.43

DIM.A1TT1T2dP0P2F1,F2deltaHWW0W1W2HH0H1D0tLl1deltaP

9/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

TO-220FP MECHANICAL DATAmm.MIN.4.42.52.50.450.751.151.154.952.4101628.69.82.915.99330.610.63.616.49.33.21.126.03850.1140.6260.3540.118TYPMAX.4.62.72.750.711.71.75.22.710.4MIN.0.1730.0980.0980.0170.0300.0450.0450.1950.0940.3930.6301.2040.4170.1410.50.3660.126inchTYP.MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409DIM.ABDEFF1F2GG1HL2L3L4L5L6L7ØABL3L6L7F1DFG1EHF2L2L5123L410/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

TO-251 (IPAK) MECHANICAL DATADIM.AA1A3BB2B3B5B6CC2DEGHLL1L20.450.4866.44.415.990.80.80.30.950.60.66.26..616.39.41.210.0170.0190.2360.2520.1730.6260.3540.0310.031mmMIN.2.20.90.70.5.2TYP.MAX.2.41.10.95.40.850.0120.0370.0230.0230.2440.2600.1810.10.3700.0470.039MIN.0.0860.0350.0250.204inchTYP.MAX.0.0940.0430.0510.0310.2120.0331.3 0.027HA C C2 1 2 3 L2DB3 B6 A1 L= = = = B5 B A3 L1= = B2 G E 0068771-E11/12

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STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-1

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for theconsequences of use of such information nor for any infringement of patents or other rights of third parties which may result fromits use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices orsystems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.http://www.st.com12/12