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专利名称：Method of measuring carrier distribution发明人：Motooka, Teruaki申请号：EP82300614.3申请日：19820208公开号：EP0059039B1公开日：19860903
摘要：A semiconductor wafer (3, 14, 24) is irradiated with a linearly polarized infraredlight beam. On the bases of changes in the polarized state of the light reflected from thewafer, the distribution of the density of carriers depthwise in the wafer is determined.Distribution of the carrier density in the semiconductor wafer can be measured veryrapidly in a contactless manner without destroying the wafer.
申请人：Hitachi, Ltd.
地址：5-1, Marunouchi 1-chome Chiyoda-ku, Tokyo 100 JP
国籍：JP
代理机构：Paget, Hugh Charles Edward
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