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专利名称：Magnetoresistive random access memory发明人：Kazumasa Suzuki申请号：US13572017申请日：20120810公开号：US09293183B2公开日：20160322
专利附图：
摘要：A magnetoresistive random access memory includes a memory cell line in whichmemory cells are formed and write bit lines. The memory cell line includes a magneticrecording layer, magnetization fixed layers, reference layers, spacer layers, and nMOStransistors. The spacer layer and the reference layer are located between the
magnetization fixed layer and the magnetization fixed layer). The magnetization fixedlayers have a magnetization fixed to a direction opposite to that of a magnetization ofthe magnetization fixed layers. The reference layers also have a fixed magnetizationdirection. The nMOS transistor is provided between the write bit line and themagnetization fixed layer.
申请人：Kazumasa Suzuki
地址：Kanagawa JP
国籍：JP
代理机构：Sughrue Mion, PLLC
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