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BFR99
DESCRIPTION
TheBFR99isasiliconplanarepitaxialPNPtransistorinJedecTO-72metalcase,particularlydesignedforwidebandcommon-emitterlinearamplifierapplica-tionsupto1GHz.ItfeatureshighfT,lowreverseca-pacitance,goodcross-modulationpropertiesandlownoise.
TO-72
INTERNALSCHEMATICDIAGRAM
ABSOLUTEMAXIMUMRATINGS
SymbolVCBOVCEOVEBOICPtotTstg,TjOctober1988
Parameter
Collector–baseVoltage(IE=0)Collector–emitterVoltage(IB=0)Emitter–baseVoltage(IC=0)CollectorCurrent
TotalPowerDissipationatTamb≤25°C
atTcase≤25°CStorageandJunctionTemperature
Value–25–25–3–50225360–55to200
UnitVVVmAmWmW°C1/4
元器件交易网www.cecb2b.com
BFR99
THERMALDATA
Rthj–caseRthj–amb
ThermalResistanceJunction–caseThermalResistanceJunction–ambient
MaxMax
486777
°C/W°C/W
ELECTRICALCHARACTERISTICS(Tamb=25°Cunlessotherwisespecified)
SymbolICBOV(BR)CBOVCEO(sus)*V(BR)EBO
VBEhFE*
Parameter
CollectorCutoffCurrent(IE=0)
Collector–baseBreakdowmVoltage(IE=0)
Collector–emitterSustainingVoltage(IB=0)
Emitter–baseBreakdownVoltage(IC=0)Base–emitterVoltageDCCurrentGain
TestConditionsVCB=–15VIC=–100µAIC=–5mAIE=–10µAIC=–10mAIC=–1mAIC=–10mAIC=–20mAIC=–10mAf=200MHzIC=0f=1MHzIC=–3mARg=50Ω
VCE=–10VVCE=–10VVCE=–10VVCE=–10VVCE=–15VVCE=–15VVCE=–15Vf=200MHzf=800MHzVCE=–15Vf=200MHzf=800MHz
*Pulsed:pulseduration=300µs,dutycycle=1%.
Min.Typ.Max.–100
UnitnAVVV
–25–25–3
–0.75
2520
758020.4
V
fTCreNF
TransitionFrequencyReverseCapacitanceNoiseFigure
GHzpF
2.53.5
5
dBdB
IC=–10mARg=50Ω
34dBdB
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元器件交易网www.cecb2b.com
BFR99
TO-72MECHANICALDATA
mm
MIN.
ABDEFGHIL
45o2.54
1.21.16
45o
TYP.12.7
0.495.34.95.8
0.100
0.0470.045
MAX.
MIN.
inchTYP.0.500
0.0190.2080.1930.228MAX.
DIM.
D
G
IH
EFA
L
C
B0016198
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元器件交易网www.cecb2b.com
BFR99
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