2SK3511-ZJ资料

MOS FIELD EFFECT TRANSISTOR2SK3511SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION

The 2SK3511 is N-channel MOS Field Effect Transistordesigned for high current switching applications.

ORDERING INFORMATION

PART NUMBER

2SK35112SK3511-S

PACKAGETO-220ABTO-262TO-263TO-220SMD Note

FEATURES

•Super low on-state resistance:

RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)•Low Ciss: Ciss = 5900 pF TYP.•Built-in gate protection diode

2SK3511-ZJ2SK3511-Z

Note TO-220SMD package is produced only in Japan.

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)Gate to Source Voltage (VDS = 0 V)Drain Current (DC) (TC = 25°C)Drain Current (pulse)

Note1

VDSSVGSSID(DC)ID(pulse)PTPTTchTstg

75±20±83±2601001.5150–55 to +150

52250

VVAAWW°C°CAmJ

(TO-262)

Total Power Dissipation (TC = 25°C)Total Power Dissipation (TA = 25°C)Channel TemperatureStorage TemperatureSingle Avalanche CurrentSingle Avalanche Energy

Note2 Note2

IASEAS

Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V

(TO-263, TO-220SMD)

THERMAL RESISTANCE

Channel to Case Thermal ResistanceChannel to Ambient Thermal Resistance

Rth(ch-C)Rth(ch-A)

1.2583.3

°C/W°C/W

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative foravailability and additional information.Document No.D15617EJ1V0DS00 (1st edition)Date PublishedMay 2002 NS CP(K)Printed in Japan

©

2001

2SK3511ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

Zero Gate Voltage Drain CurrentGate Leakage CurrentGate Cut-off VoltageForward Transfer AdmittanceDrain to Source On-state ResistanceInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTurn-on Delay TimeRise Time

Turn-off Delay TimeFall Time

Total Gate ChargeGate to Source ChargeGate to Drain ChargeBody Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge

SYMBOLIDSSIGSSVGS(off)| yfs|RDS(on)CissCossCrsstd(on)trtd(off)tfQGQGSQGDVF(S-D)trrQrr

VDD = 60 VVGS = 10 VID = 83 A

IF = 83 A, VGS = 0 VIF = 83 A, VGS = 0 Vdi/dt = 100 A/ µs

TEST CONDITIONS

VDS = 75 V, VGS = 0 VVGS = ±20 V, VDS = 0 V

MIN.TYP.MAX.10±10

UNIT

µAµAVS

VDS = 10 V, ID = 1 mAVDS = 10 V, ID = 42 AVGS = 10 V, ID = 42 AVDS = 10 VVGS = 0 Vf = 1 MHz

VDD = 38 V, ID = 42 AVGS = 10 VRG = 0 Ω

2.021

3.0459.559008104003021721210024351.170200

4.0

12.5mΩpFpFpFnsnsnsnsnCnCnCVnsnC

TEST CIRCUIT 1 AVALANCHE CAPABILITYD.U.T.RG = 25 ΩPG.VGS = 20 → 0 V50 Ω

TEST CIRCUIT 2 SWITCHING TIMED.U.T.LVDDPG.RGRLVDDVGSVGSWave Form010%VGS90%VDS90%90%10%10%BVDSSIASIDVDDStarting TchVDSVGS0τVDSVDSWave Form0td(on)tontrtd(off)tofftfµ sτ = 1 Duty Cycle ≤ 1%TEST CIRCUIT 3 GATE CHARGED.U.T.IG = 2 mAPG.50 ΩRLVDD2

Data Sheet D15617EJ1V0DS

2SK3511TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA

120TOTAL POWER DISSIPATION vs.CASE TEMPERATURE

1201008060402000255075100125150175dT - Percentage of Rated Power - %1008060402000255075100125150175TC - Case Temperature - °C

FORWARD BIAS SAFE OPERATING AREA

PT - Total Power Dissipation - WTC - Case Temperature - °C1000ID(DC)ID(pulse)itedmiL V) (on 10=DS RGSat VPW = 10 µs100 µs1 msID - Drain Current - A100DC10Power Dissipation Limited10 ms1TC = 25˚CSingle Pulse101VDS - Drain to Source Voltage - V

1000.10.1TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

100rth(t) - Transient Thermal Resistance - °C/W10Rth(ch-A) = 83.3˚C/W1Rth(ch-C) = 1.25˚C/W0.10.0110µSingle Pulse100µ1 m10 m100 m 1101001000PW - Pulse Width - s

Data Sheet D15617EJ1V0DS

3

2SK3511DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

300Pulsed250VGS = 10 VID - Drain Current - A1000VDS = 10 V100ID - Drain Current - A20015010050001234567810TA = 150°C75°C25°C−55°C123456710.1VDS - Drain to Source Voltage - VGATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE

VGS - Gate to Source Voltage - VFORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

4.0 VGS(off) – Gate Cut-off Voltage - V100 | yfs | - Forward Transfer Admittance - S3.53.02.52.01.51.00.50.0-75-252575125175VDS = 10 VID = 1 mAVDS = 10 VPulsed101TA = 150°C75°C25°C−55°C0.10.010.010.1110100Tch - Channel Temperature - °CDRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENTRDS(on) - Drain to Source On-state Resistance - mΩPulsedID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.GATE TO SOURCE VOLTAGERDS(on) - Drain to Source On-state Resistance - mΩ20181614121082020181614121082002468101214161820VGS - Gate to Source Voltage - V

PulsedVGS = 10 VID = 42 A0.11101001000ID - Drain Current - A

4

Data Sheet D15617EJ1V0DS

2SK3511DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

RDS(on) - Drain to Source On-state Resistance - mΩCAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

25PulsedCiss, Coss, Crss - Capacitance - pF10000Ciss201000Crss15Coss101005VGS = 10 VID = 42 A-50050100150200VGS = 0 Vf = 1 MHz0-100100.1110100Tch - Channel Temperature - °CSWITCHING CHARACTERISTICS

VDS - Drain to Source Voltage - V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

1000tftd(on), tr, td(off), tf - Switching Time - ns1008060100td(off)td(on)tr6VGS4VDSID = 83 A201204020002040608010010VDD = 38 VVGS = 10 VRG = 0 Ω11010010.1ID - Drain Current - A

QG - Gate Charge - nC

REVERSE RECOVERY TIME vs. DRAIN CURRENT

SOURCE TO DRAIN DIODEFORWARD VOLTAGE

1000Pulsed10010010VGS = 10 V10 V0.1trr - Reverse Recovery Time - nsISD - Diode Forward Current - A0.01VGS = 0 Vdi/dt = 100 A/ µs100.111010000.20.40.60.811.21.41.61.82VSD - Source to Drain Voltage - V

IF - Drain Current - A

Data Sheet D15617EJ1V0DS

5

VGS - Gate to Source Voltage - VVDS - Drain to Source Voltage - VVDD = 60 V38 V15 V1082SK3511SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOADSINGLE AVALANCHE ENERGYDERATING FACTOR

1000160140IAS - Single Avalanche Current - AEnergy Derating Factor - %12010080604020025VDD = 35 VRG = 25 ΩVGS = 20 → 0 VIAS ≤ 52 A100IAS = 52 AEAS = 250 mJ10VDD = 35 VRG = 25 ΩVGS = 20 → 0 V10.0010.010.11105075100125150L - Inductive Load - mHStarting Tch - Starting Channel Temperature - °C

6

Data Sheet D15617EJ1V0DS

2SK3511PACKAGE DRAWINGS (Unit: mm)

1) TO-220 (MP-25)3.0±0.310.6 MAX.4.8 MAX.2) TO-262 (MP-25 Fin Cut)1.0±0.5φ3.6±0.210.0 TYP.5.9 MIN.15.5 MAX.1.3±0.210 TYP.4.8 MAX.1.3±0.2411.3±0.22341236.0 MAX.1.3±0.212.7 MIN.12.7 MIN.8.5±0.20.75±0.12.54 TYP.0.5±0.22.54 TYP.1.Gate2.Drain3.Source4.Fin (Drain)2.8±0.20.75±0.32.54 TYP.0.5±0.22.54 TYP.2.8±0.21.Gate2.Drain3.Source4.Fin (Drain)3) TO-263 (MP-25ZJ)10 TYP.44.8 MAX.1.3±0.24) TO-220SMD (MP-25Z)10 TYP.4 Note

4.8 MAX.1.3±0.21.0±0.58.5±0.21.0±0.511.4±0.20.7±0.22.54 TYP.231YP T.YP.231.1±0.45.7±0.41.4±0.20.5±0.20.75±0.32.54 TYP.0.5R2.54 TYP.0.8TR .YP.TR YP0.5R T.82.54 TYP.03.0±0.58.5±0.20.5±0.22.8±0.2Note This Package is only produced in Japan.

EQUIVALENT CIRCUIT

DrainRemark The diode connected between the gate and source of the transistor

serves as a protector against ESD. When this device actuallyused, an additional protection circuit is externally required if avoltage exceeding the rated voltage may be applied to this device.

GateBodyDiodeGateProtectionDiodeSource2.8±0.21.Gate2.Drain3.Source4.Fin (Drain)1.Gate2.Drain3.Source4.Fin (Drain)Data Sheet D15617EJ1V0DS

7

2SK3511•The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.•No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.•NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.•Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.•While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.•NEC semiconductor products are classified into the following three quality grades:\"Standard\developed based on a customer-designated \"quality assurance program\" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. \"Standard\":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipmentand industrial robots\"Special\":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)\"Specific\":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is \"Standard\" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)\"NEC\" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2)\"NEC semiconductor products\" means any semiconductor product developed or manufactured by or forNEC (as defined above).M8E 00. 4