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专利名称：Semiconductor device having an insulated
gate and a fabrication process thereof
发明人：Hajime Kurata申请号：US09818651申请日：20010328公开号：US06624483B2公开日：20030923
专利附图：
摘要：A semiconductor device includes a T-shaped gate on a gate insulation film,wherein the T-shaped gate includes a lower polycrystal layer containing Si and Ge and anupper polycrystal layer of polysilicon.
申请人：FUJITSU LIMITED
代理机构：Armstrong, Westerman & Hattori, LLP
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