SIR4DP资料

New Product

SiR4DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

S

PRODUCT SUMMARY

VDS (V)30

RDS(on) (Ω)0.0031 at VGS = 10 V 0.0038 at VGS = 4.5 V

ID (A)a, e

5050

Qg (Typ.)26.5 nC

FEATURES

•Halogen-free

•TrenchFET® Power MOSFET •100 % Rg and UIS Tested

RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS

•DC/DC Conversion

- Low-Side Switch •Notebook •Server

6.15 mm S 1 S 3 5.15 mm D 2 SS G 4 D 8 7 6 5 D D D G Bottom ViewOrdering Information: SiR4DP-T1-GE3 (Lead (Pb)-free and Halogen-free)S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter ymbol Limit Unit VDSDrain-Source Voltage 30

V

VGate-Source Voltage ± 20GS

TC = 25 °C50eTC = 70 °C50eContinuous Drain Current (TJ = 150 °C)ID

TA = 25 °C29.5b, cTA = 70 °C23.5b, c

A

IDMPulsed Drain Current70

TC = 25 °C50eISContinuous Source-Drain Diode Current

TA = 25 °C4.7b, c

IASSingle Pulse Avalanche Current40

L = 0.1 mH

EASmJAvalanche Energy80

TC = 25 °C69TC = 70 °C44.4

PDMaximum Power DissipationW

TA = 25 °C5.2b, cTA = 70 °C3.3b, c

TJ, TstgOperating Junction and Storage Temperature Range - 55 to 150

°C

260Soldering Recommendations (Peak Temperature)f, g

THERMAL RESISTANCE RATINGS

Parameter ymbol TypicalMaximumUnit b, dRthJAt ≤ 10 s1924Maximum Junction-to-Ambient°C/W

RthJCMaximum Junction-to-Case (Drain)Steady State1.21.8

Notes:

a.Based on TC = 25 °C.

b.Surface Mounted on 1\" x 1\" FR4 board.c.t = 10 s.

d.Maximum under Steady State conditions is 65 °C/W.e.Package limited.

f.See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed andis not required to ensure adequate bottom side solder interconnection.

g.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.Document Number: 68871S-82017-Rev. A, 01-Sep-08

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New Product

SiR4DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Static

Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source Leakage

Zero Gate Voltage Drain CurrentOn-State Drain Currenta

Drain-Source On-State ResistanceaForward TransconductanceaDynamicb

Input CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Ciss Coss Crss Qg Qgs QgdRgtd(on) tr td(off)

VDD = 15 V, RL = 1.5 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω

f = 1 MHz

0.2

VDS = 15 V, VGS = 10 V, ID = 10 AVDS = 15 V, VGS = 4.5 V, ID = 10 AVDS = 15 V, VGS = 0 V, f = 1 MHz

35456502406226.58.57.31.135181618

VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

8419

TC = 25 °CIS = 3 A

0.7233

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

271716

2.2603085303516701850701.16554

nsΩ

9540

nCpF

VDS ΔVDS/TJΔVGS(th)/TJVGS(th)IGSSIDSSID(on) RDS(on)gfs

VGS = 0 V, ID = 1 mA

ID = 250 µA

VDS = VGS , ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 VVDS = 30 V, VGS = 0 V, TJ = 55 °C

VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 15 A

30

0.00260.003175

0.00310.0038

1.230

27- 5.6

2.5± 100110

VmV/°CVnAµAAΩS

Parameter ymbol Test Conditions Min. Typ.Max.Unit tfStd(on) Turn-On Delay Time

tr td(off) tfISISMVSDtrrQrrtatb

Rise Time

Turn-Off Delay TimeFall Time

Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode CurrentPulse Diode Forward CurrentaBody Diode Voltage

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time

AVnsnCns

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

www.vishay.com2Document Number: 68871S-82017-Rev. A, 01-Sep-08

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New ProductSiR4DPVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted70VGS=10thru4V56ID- DrainCurrent(A)ID- DrainCurrent(A)VGS=3V428106284TC=25 °C2TC=125 °CTC=-55 °C23451400.000.51.01.52.02.501VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V)Output Characteristics0.00454500Transfer CharacteristicsRDS(on)- On-Resistance(Ω)0.0040VGS=4.5VC - Capacitance(pF)3600Ciss0.003527000.0030VGS=10V18000.0025900Crss0612Coss0.0020014284256700182430ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)On-Resistance vs. Drain Current and Gate Voltage

10ID=10AVGS- Gate-to-SourceVoltage(V)81.6VDS=15VRDS(on)- On-Resistance(Normalized)VDS=10VVDS=20V1.41.8ID=15ACapacitance

VGS=10V61.2VGS=4.5V41.020.80013263952650.6- 50- 250255075100125150Qg-TotalGateCharge(nC)TJ-JunctionTemperature(°C)Gate Charge

Document Number: 68871S-82017-Rev. A, 01-Sep-08

On-Resistance vs. Junction Temperature

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New ProductSiR4DPVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted1000.025ID=15AIS- SourceCurrent(A)TJ=150 °C1TJ=25 °CRDS(on)- On-Resistance(Ω)100.0200.0150.10.010TJ=125 °C0.005TJ=25°C01234567100.010.0010.00.0000.20.40.60.81.01.2VSD-Source-to-DrainVoltage(V)VGS-Gate-to-SourceVoltage(V)Source-Drain Diode Forward Voltage0.4200On-Resistance vs. Gate-to-Source Voltage0.2VGS(th)Variance(V)1600.0Power(W)120- 0.2ID=5mA- 0.4ID=250 µA80- 0.0- 0.8- 500- 2502550751001251500.0010.010.1Time(s)110TJ-Temperature(°C)Threshold Voltage

100LimitedbyRDS(on)*1ms10ID-DrainCurrent(A)10msSingle Pulse Power

1100ms1s10s0.1DCTA=25 °CSinglePulse0.010.010.1110100VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedSafe Operating Area, Junction-to-Ambient

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Document Number: 68871S-82017-Rev. A, 01-Sep-08

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New Product

SiR4DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

12096ID-DrainCurrent(A)72PackageLimited482400255075100125150TC-CaseTemperature(°C)Current Derating*

902.5722.0Power(W)36Power(W)0255075100125150541.51.0180.500.00255075100125150TC-CaseTemperature(°C)TA-AmbientTemperature(°C)Power, Junction-to-AmbientPower Derating, Junction-to-Case

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

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New Product

SiR4DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.10.05PDMt1Notes:0.02SinglePulse0.0110-410-310-2110-1SquareWavePulseDuration(s)10t21.DutyCycle,D=2.PerUnitBase=RthJA=65 °C/W3.TJM-TA=PDMZthJA(t)4.SurfaceMountedt1t21001000Normalized Thermal Transient Impedance, Junction-to-Ambient1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.050.10.02SinglePulse0.0110-410-310-210-1SquareWavePulseDuration(s)110Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see http://www.vishay.com/ppg?68871.

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000Revision: 18-Jul-08

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