SIR414DP资料

New Product

SiR414DP

Vishay Siliconix

N-Channel 40-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)40

RDS(on) (Ω)0.0028 at VGS = 10 V 0.0032 at VGS = 4.5 V

ID (A)a5050

Qg (Typ.)38 nC

FEATURES

•Halogen-free According to IEC 61249-2-21

Definition

•TrenchFET® Power MOSFET •100 % Rg Tested •100 % UIS Tested

PowerPAK® SO-8APPLICATIONS

6.15 mmS1234D8765DDDSSG5.15 mm •Synchronous Rectification •Secondary Side DC/DC

DGBottom ViewOrdering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free)SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol LimitUnit VDSDrain-Source Voltage 40

V

VGSGate-Source Voltage ± 20

TC = 25 °C50aTC = 70 °C50a

Continuous Drain Current (TJ = 150 °C)ID

TA = 25 °C33b, cTA = 70 °C26b, c

A

IDMPulsed Drain Current70

TC = 25 °C50a

ISContinuous Source-Drain Diode Current

TA = 25 °C4.9b, c

IASSingle Pulse Avalanche Current40

L = 0.1 mH

EASmJ80Single Pulse Avalanche Energy

TC = 25 °C83TC = 70 °C53

PDMaximum Power DissipationW

TA = 25 °C5.4b, cTA = 70 °C3.4b, c

TJ, TstgOperating Junction and Storage Temperature Range - 55 to 150

°Cd, e260Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter Symbol TypicalMaximumUnit RthJAt ≤ 10 s1823Maximum Junction-to-Ambientb, f

°C/W

RthJCSteady State1.01.5Maximum Junction-to-Case (Drain)

Notes:

a.Package Limited.

b.Surface Mounted on 1\" x 1\" FR4 board.c.t = 10 s.

d.See Solder Profile (www.vishay.com/ppg?727). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder interconnection.

e.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.f.Maximum under Steady State conditions is 65 °C/W.Document Number: 727S09-0319-Rev. A, 02-Mar-09

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New Product

SiR414DP

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Static

Drain-Source Breakdown VoltageVDS Temperature CoefficientVGS(th) Temperature CoefficientGate-Source Threshold VoltageGate-Source Leakage

Zero Gate Voltage Drain CurrentOn-State Drain Currenta

Drain-Source On-State ResistanceaForward TransconductanceaDynamicb

Input CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTotal Gate ChargeGate-Source ChargeGate-Drain ChargeGate ResistanceTurn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Turn-On Delay TimeRise Time

Turn-Off Delay TimeFall Time

Drain-Source Body Diode CharacteristicsContinuous Source-Drain Diode Current

Pulse Diode Forward CurrentaBody Diode Voltage

Body Diode Reverse Recovery TimeBody Diode Reverse Recovery ChargeReverse Recovery Fall TimeReverse Recovery Rise Time

ISISMVSDtrrQrrtatb

IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C

IS = 5 A

0.7540482416

TC = 25 °C

50601.16072

VnsnCnsA

CissCossCrss QgQgs Qgd Rgtd(on) trtd(off) tftd(on) trtd(off) tf

VDD = 20 V, RL = 2 Ω

ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 ΩVDD = 20 V, RL = 2 Ω

ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω

f = 1 MHz

0.2

VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A VDS = 20 V, VGS = 0 V, f = 1 MHz

4750610275783813110.714941933224213

1.42518651842356525

nsΩ

11757

nCpF

VDSΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSSIDSSID(on) RDS(on) gfs

VGS = 0 V, ID = 250 µA

ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 55 °C

VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A

30

0.00230.0026102

0.00280.0032

1.040

43- 6

2.5± 100110

VmV/°CVnAµAAΩS

Parameter Symbol Test Conditions Min. Typ.Max.Unit Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximumrating conditions for extended periods may affect device reliability.

www.vishay.com2Document Number: 727S09-0319-Rev. A, 02-Mar-09

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New ProductSiR414DPVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted70VGS=10Vthru3V56ID- DrainCurrent(A)1.5ID- DrainCurrent(A)42TC=25 °C1.02.028140.5TC=125 °CTC=-55 °C0.61.21.82.43.000.00.51.01.52.00.00.0VDS-Drain-to-SourceVoltage(V)VGS-Gate-to-SourceVoltage(V)Output Characteristics

0.00306000Transfer Characteristics

CissRDS(on)- On-Resistance(Ω)VGS=4.5V0.0025VGS=10V4500C - Capacitance(pF)30000.00201500Coss0.0015010203040506000Crss612182430ID-DrainCurrent(A)VDS-Drain-to-SourceVoltage(V)On-Resistance vs. Drain Current

10ID=20AVGS- Gate-to-SourceVoltage(V)8VDS=20V6VDS=24V4RDS(on)- On-Resistance1.72.0ID=20ACapacitance

VGS=10V(Normalized)1.4VGS=4.5V1.120.8001530456075900.5- 50- 250255075100125150Qg-TotalGateCharge(nC)TJ-JunctionTemperature(°C)Gate ChargeDocument Number: 727S09-0319-Rev. A, 02-Mar-09

On-Resistance vs. Junction Temperature

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New ProductSiR414DPVishay SiliconixTYPICAL CHARACTERISTICS 25°C, unless otherwise noted1000.012RDS(on)- On-Resistance(Ω)IS- SourceCurrent(A)10TJ=150 °C0.009TJ=25 °C10.006TJ=125 °C0.003TJ=25°C0.100.20.40.60.81.01.2VSD-Source-to-DrainVoltage(V)0.0000246810VGS-Gate-to-SourceVoltage(V)Source-Drain Diode Forward Voltage2.1200On-Resistance vs. Gate-to-Source Voltage1.7Power(W)160120VGS(th)(V)1.3ID=250 µA800.9400.5- 500- 2502550751001251500.0010.010.1Time(s)110TJ-Temperature(°C)Threshold Voltage100LimitedbyRDS(on)*10ID-DrainCurrent(A)Single Pulse Power, Junction-to-Ambient100µs1ms10ms1100ms1s0.1TA=25 °CSinglePulse0.010.01BVDSSLimited10sDC0.1110100VDS-Drain-to-SourceVoltage(V)*VGS>minimumVGSatwhichRDS(on)isspecifiedSafe Operating Area, Junction-to-Ambientwww.vishay.com4Document Number: 727S09-0319-Rev. A, 02-Mar-09

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New Product

SiR414DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

150120ID-DrainCurrent(A)9060PackageLimited3000255075100125150TC-CaseTemperature(°C)Current Derating*1002.5802.0Power(W)Power(W)601.5401.0200.5002550751001251500.00255075100125150TC-CaseTemperature(°C)TA-AmbientTemperature(°C)Power, Junction-to-Case

Power, Junction-to-Ambient

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the packagelimit.

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New Product

SiR414DP

Vishay Siliconix

TYPICAL CHARACTERISTICS 25°C, unless otherwise noted

1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.05Notes:PDMt10.10.02SinglePulse0.0110-410-310-210-11SquareWavePulseDuration(s)10t21.DutyCycle,D=2.PerUnitBase=RthJA=65 °C/W3.TJM- TA=PDMZthJA(t)4.SurfaceMountedt1t21001000Normalized Thermal Transient Impedance, Junction-to-Ambient

1DutyCycle=0.5NormalizedEffectiveTransientThermalImpedance0.20.10.10.050.02SinglePulse0.0110-410-310-2SquareWavePulseDuration(s)10-11Normalized Thermal Transient Impedance, Junction-to-CaseVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see www.vishay.com/ppg?727.www.vishay.com6Document Number: 727S09-0319-Rev. A, 02-Mar-09

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained hereinor in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of anyinformation provided herein to the maximum extent permitted by law. The product specifications do not expand orotherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressedtherein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by thisdocument or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unlessotherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in suchapplications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resultingfrom such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regardingproducts designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000Revision: 18-Jul-08

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