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专利名称：Semiconductor device having through
electrode and method of fabricating thesame
发明人：Ki-Tae Park,Kang-Wook Lee,Hyun-Kyoung
Kim
申请号：US13621314申请日：20120917公开号：US08659163B2公开日：20140225
专利附图：
摘要：A semiconductor device includes a substrate, and a through electrode passing
through the substrate. The semiconductor device has a pad region and a throughelectrode region. A pad covers the pad region, extends into the through electroderegion, and delimits an opening in the through electrode region. A through electrodeextends through the semiconductor substrate below the hole in the pad in the throughregion.
申请人：Samsung Electronics Co., Ltd.
地址：Suwon-si KR
国籍：KR
代理机构：Volentine & Whitt, PLLC
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