专利内容由知识产权出版社提供
专利名称：Structure and method for manufacturing
device with ultra thin SOI at the tip of a V-shape channel
发明人：Huilong Zhu,Mahender Kumar,Dan M.
Mocuta,Ravikumar Ramachandran,WenjuanZhu
申请号：US12054727申请日：20080325公开号：US07528027B1公开日：20090505
专利附图：
摘要：An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shapetrench has a surface in a (111) plane and extends into an SOI layer in the pFet region. Alayer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si isdeposited on top of the layer.
申请人：Huilong Zhu,Mahender Kumar,Dan M. Mocuta,RavikumarRamachandran,Wenjuan Zhu
地址：Poughkeepsie NY US,Fishkill NY US,LaGrangeville NY US,Pleasantville NYUS,Fishkill NY US
国籍：US,US,US,US,US
代理人：Joseph Petrokaitis
更多信息请下载全文后查看
