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专利名称：Method for forming dual damascene line
structure
发明人：Eun Suk Hong申请号：US10062717申请日：20020205公开号：US06573176B2公开日：20030603
专利附图：
摘要：A method of forming a dual damascene line structure suitable for forming a finepattern is disclosed in the present invention. The method for forming a dual damasceneline structure on a substrate includes sequentially depositing an inter-metal dielectric
and a first hard mask over the substrate, partially removing the first hard mask to have apositive trench pattern using a first photoresist pattern as a mask, forming a second hardmask having a substantially different etch selectivity from the first hard mask on thepartially removed portion of the first hard mask, selectively removing the first hard maskto have a negative via hole pattern using a second photoresist pattern as a mask, partiallyremoving the inter-metal dielectric to have a via hole pattern using the first hard mask asa mask, and forming a trench and a via hole by removing the exposed first hard mask andselectively etching the inter-metal dielectric using the second hard mask.
申请人：HYNIX SEMICONDUCTOR INC.
代理机构：Morgan, Lewis & Bockius LLP
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