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专利名称：Method for forming dual damascene line
structure
发明人：Kil Ho Kim申请号：US10062716申请日：20020205公开号：US06743711B2公开日：20040601
专利附图：
摘要：A method for forming a dual damascene line structure includes forming aninter-metal dielectric including a first region and a second region on a semiconductorsubstrate, forming a first hard mask material layer on an entire surface of the inter-metal
dielectric, removing the first hard mask material layer on the first region, forming asecond hard mask material layer on an entire surface of the inter-metal dielectric,forming a hard mask to remove a portion of the first hard mask material layer on thesecond region, etching the inter-metal dielectric of the first region to a first thicknessusing the hard mask, exposing the inter-metal dielectric of the second region, andetching the exposed inter-metal dielectric to simultaneously form a via hole and a trenchhaving the via hole.
申请人：HYNIX SEMICONDUCTOR INC.
代理机构：Morgan, Lewis & Bockius LLP
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