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专利名称：METHOD OF FORMING DUAL DAMASCENE
STRUCTURE
发明人：I-Hsiung Huang,Jiunn-Ren Hwang,Kuei-Chun
Hung,Ching-Hsu Chang
申请号：US09997339申请日：20011127
公开号：US20030100188A1公开日：20030529
专利附图：
摘要：A method of forming a dual damascene structure. A substrate has a conductiveline formed thereon. A first dielectric layer, a second dielectric layer and cap layer serving
as a base anti-reflection coating are sequentially formed over the substrate. The caplayer, the second dielectric layer and the first dielectric layer are patterned to form a viaopening that exposes a portion of the conductive line. A patterned negative photoresistlayer having a second opening therein is formed above the cap layer. Using the negativephotoresist layer as a mask, the exposed cap layer and the second dielectric layer areremoved to form a trench that exposes the first dielectric layer. The negative photoresistlayer is removed. A conformal barrier layer and a conductive layer are sequentiallyformed over the trench and the via opening with the conductive layer completely fillingthe trench and the via opening.
申请人：HUANG I-HSIUNG,HWANG JIUNN-REN,HUNG KUEI-CHUN,CHANG CHING-HSU
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