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专利名称：Method of forming dual damascene
structure
发明人：Tien-Chu Yang申请号：US098287申请日：20010409
公开号：US20020102834A1公开日：20020801
专利附图：
摘要：A method of forming a dual damascene structure. A first low-dielectric-constantdielectric layer, an etching stop layer, a second low-dielectric-constant dielectric layerand a silicon oxynitride layer are sequentially formed over a substrate. A dual damascene
slot is formed in the first low-dielectric-constant dielectric layer, and a barrier layer thatis formed over the exposed surface of the dual damascene slot and the silicon oxynitridelayer. Copper is deposited over the substrate filling the dual damascene slot. A copperchemical-mechanical polishing (Cu CMP) is conducted to remove excess copper materialusing the barrier layer as a polishing stop layer. A Copper/barrier metal CMP isconducted to remove the barrier layer using the silicon oxynitride as an etching stoplayer. An ammonia plasma treatment is performed on the exposed silicon oxynitride,barrier layer and copper on the substrate. Finally, a cap layer is formed over thesubstrate.
申请人：YANG TIEN-CHU
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