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专利名称：Photoresist stripping solution and a method
of stripping photoresists using the same
发明人：Shigeru Yokoi,Kazumasa Wakiya申请号：US10208096申请日：20020731
公开号：US20030114014A1公开日：20030619
摘要：A photoresist stripping solution which comprises (a) a salt of hydrofluoric acidwith a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercaptogroup containing corrosion inhibitor, and (d) water, and a method of stripping
photoresists with the use of the same are disclosed. In case of using ammonium fluorideas component (a), the photoresist stripping solution may further contain (e) a salt ofhydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammoniumhydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. Thephotoresist stripping solution of the present invention has an excellent effect ofprotecting both Al- and Cu-based metal wiring conductors from corrosion, of efficientlystripping photoresist films and post-ashing residues, and is free from the precipitation ofthe corrosion inhibitor.
申请人：YOKOI SHIGERU,WAKIYA KAZUMASA
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